FD800R33KF2C-K Infineon Technologies, FD800R33KF2C-K Datasheet - Page 6

• Manufacturer Part Number: FD800R33KF2C-K
• Description: IGBT Modules N-CH 3.3KV 1.3KA
• Manufacturer: Infineon Technologies

Specifications of FD800R33KF2C-K

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 3300 V
• Continuous Collector Current At 25 C: 1300 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHV190
• Ic (max): 800.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: IHV 190 mm

Technische Information / technical information
IGBT-Module
IGBT-modules
&
&
%USj * W3gX
%USj * W3gX
NC54 * ";J P; -./ * "2
NC54 * ";J P; -./ * "2
'
'
q@Kb. * W X
q@Kb. * W X
&
&
%USj * W3gX
%USj * W3gX
NC54 * ";J P; -./ * "2
NC54 * ";J P; -./ * "2
'
'
q@Kb. * W X
q@Kb. * W X
?
?
?
?
1600
1400
1200
1000
800
600
400
200
100
0,1
10
0
1
0,001
0
BG
BG
BG
BG
200
1
1
1
1
%USj
q@Kb. 1
0,01
400
?
?
?
?
B
B
B
B
600
-; '() * " +,
-; '() * " +,
-; '() * " +,
-; '() * " +,
FD800R33KF2C-K
3g w7x
1
1
1
1
# W
# W
# W
# W
800
Ow$E Bx
0,1
W
W
W
W
Ow x
w x
1000 1200 1400 1600
B
B
B
B
"
"";\
;
X
X
X
X
X
X
X
X
!;+
;"
1
";+!
;
#
#
#
#
#
J
!; J
"
10
6
&
&
%USj * WNCX
%USj * WNCX
3g * 2
3g * 2
&
&
3< * W-<X
3< * W-<X
'() * " +,
'() * " +,
&
&
%USj * WNCX
%USj * WNCX
3g * 2
3g * 2
&
&
3< * W-<X
3< * W-<X
'() * " +,
'() * " +,
! "
?
?
?
?
1600
1400
1200
1000
2000
1800
1600
1400
1200
1000
800
600
400
200
800
600
400
200
0
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
0
7; -./ * "2
7; -./ * "2
7; -./ * "2
7; -./ * "2
7
7
7
7
500
1
1
1
1
%USj
3<; Q
1000
B
B
B
B
-; '() * " +,
-; '() * " +,
-; '() * " +,
-; '() * " +,
1
1
1
1
Vorläufige Daten
preliminary data
1500
NC wPx
-< w-x
B
B
B
B
# W
# W
# W
# W
W
W
W
W
2000
W&y7X
W&y7X
W&y7X
W&y7X
X
X
X
X
X
X
X
X
# W&y7X
# W&y7X
# W&y7X
# W&y7X
2500
3000
3500