ST92F150-DBE STMicroelectronics, ST92F150-DBE Datasheet - Page 378

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ST92F150-DBE

Manufacturer Part Number
ST92F150-DBE
Description
MCU, MPU & DSP Development Tools ST9 Dedication Board
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST92F150-DBE

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST92F124/F150/F250 - ELECTRICAL CHARACTERISTICS
Note:
(1) Unless otherwise stated, typical data are based on T
(2) Value guaranteed by characterisation.
(3) For a description of the EMR1 Register - BSZ bit refer to the External Memory Interface Chapter.
(4) Value guaranteed by Design.
(5) Not tested in production, guaranteed by product characterisation. An overload condition occurs when the input voltage on any pin ex-
ceeds the specified voltage range.
(6) Indicative values extracted from design simulation, 20% to 80% on 50pF load, EMR1.BSZ bit =0.
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1
Symbol
|I
I
LKADC
I
LKIOD
⎥I
I
SR
SR
V
WPU
LKIO
I
OV
IO
production.
OL
R
F
|
Output Low Level
P4[7:6]-P6[5:4]
Output Low Level
All pins except OSCOUT
Weak Pull-up Current
P2[7:4]-P2[1:0]-P3[7:0]
P4[7:5]-P4[3:1]-P5.3-P6[7:6]-P6[3:0]-
P7[7:0]-P8[7:0]-P9[7:0]
Weak Pull-up Current
P6[5:4]-AS-DS-RW
I/O Pin Input Leakage
I/O Pin Open Drain Input Leakage
ADC Conv.Input leakage current on ro-
bust pins
ADC Conv.Input leakage current
Load current
Overload Current
Slew Rate Rise
Slew Rate Fall
Parameter
A
= 25°C and V
Push Pull or
Open Drain mode,
I
EMR1.BSZ bit = 1
Push Pull or
Open Drain mode,
I
Bidirectional
Weak Pull-up mode
V
Bidirectional
Weak Pull-up mode
V
Input or Tri-State mode,
0V < V
Input or Tri-State mode,
0V < V
V
on robust analog pin
V
P4[7:6]-P6[5:4]
EMR1.BSZ bit = 1
P4[7:6]-P6[5:4]
EMR1.BSZ bit = 0
All other pins except
OSCOUT
(5)
(6)
(6)
OL
OL
IN
IN
IN
SS
=8mA,
=2mA
<
= 0V
= 0V
V
V
SS,
IN
IN
IN
Comment
DD
< V
< V
| I
= 5V. They are only reported for design guide lines not tested in
V
IN
DD
DD
DD
|< 400µA
(3)
(3)
(3)
Min
100
– 1
– 1
50
20
20
Value
Typ
100
220
(1)
Max
2
2
5
300
450
8
0.4
0.4
30
30
1
6
1
(4)
1
(4)
(4)
(4)
Unit
mA
mA
μA
μA
μA
μA
μA
μA
ns
ns
V
V

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