VUB116-16NO1 IXYS, VUB116-16NO1 Datasheet - Page 5

• Manufacturer Part Number: VUB116-16NO1
• Description: RECT BRIDGE 3PH 1600V 116A E2
• Manufacturer: IXYS

Specifications of VUB116-16NO1

• Voltage - Peak Reverse (max): 1600V
• Current - Dc Forward (if): 116A
• Diode Type: Three Phase - IGBT with Diode
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: PCB
• Package / Case: E2
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature Classification: Automotive
• Vrrm, Rect, (v): 1600
• Idav, Rec, (a): 116
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 80
• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 67
• Vrrm, Fast Diode, (v): 1200
• If(av), Fast Diode, (a): 27
• Trr, Fast Diode, (ns): 40
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Z
[K/W]
[A]
P
[W]
I
F
thJC
tot
0.01
150
120
400
300
200
100
0.1
90
60
30
0.001
0
0
1
0.0
0
Fig. 6 Transient thermal impedance junction to case
Fig. 4 Power dissipation versus direct output current
Fig. 1 Forward current vs. voltage
20
0.5
and ambient temperature, sine 180°
drop per diode
T
T
VJ
VJ
= 125°C
= 25°C
40
V
1.0
F
[V]
I
dAVM
60
1.5
[A]
0.01
80
2.0
100
I
t [s]
[A]
FSM
400
300
200
100
0
0.001
0
Fig. 2 Surge overload current
20
50Hz, 80% V
T
T
VJ
40
VJ
0.1
= 45°C
= 150°C
0.01
60
T
RRM
t [s]
80 100 120 140
amb
[°C]
0.1
R
0.1 K/W
0.3 K/W
0.6 K/W
1.0 K/W
1.5 K/W
2.5 K/W
thA
:
1
1
I
[A]
[A
dAV
I
2
2
t
s]
160
140
120
100
10
10
80
60
40
20
0
4
3
1
0
Fig. 5 Max. forward current vs.
T
Fig. 3 I
VUB 116-16NO1
VJ
T
= 45°C
20 40 60 80 100 120 140
0.085
0.041
0.309
0.215
VJ
R
= 150°C
i
case temperature
2
t versus time per diode
2
0.012
0.007
0.036
0.102
T
τ
C
i
3
t [ms]
[°C]
4 5 6 7 8 9
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