VUO80-12NO1 IXYS, VUO80-12NO1 Datasheet - Page 3

• Manufacturer Part Number: VUO80-12NO1
• Description: RECT BRIDGE 3PH 82A 1200V V1-A
• Manufacturer: IXYS

Specifications of VUO80-12NO1

• Voltage - Peak Reverse (max): 1200V
• Current - Dc Forward (if): 82A
• Diode Type: Three Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: PCB
• Package / Case: V1-A
• Vrrm, (v): 1200
• Vrsm, (v): 1300
• Idavm, (a): 82
• @ Th, (°c): 90
• @ Tc, (°c): -
• Ifsm, 10 Ms, Tvj = 45°c, (a): 600
• Vt0, (v): 0.80
• Rt, (mohms): 7.5
• Tvjm, (°c): 150
• Rthjc, Per Chip, (k/w): -
• Rthjh, Per Chip, (k/w): 1.63
• Package Style: V1-A-Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

I
P
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F
tot
200
150
100
K/W
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
50
W
A
0.001
0
0
0.0
0
Fig. 1 Forward current versus
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 6 Transient thermal impedance per diode
10
0.5
voltage drop per diode
20
30
1.0
40
0.01
V
F
50
1.5
60
I
V
d(AV)M
2.0
70
80
I
0.1
FSM
A
500
400
300
200
100
0
A
0.001
0
Fig. 2 Surge overload current per diode
20
40
I
FSM
0.01
: Crest value. t: duration
60
1
80 100 120 140
T
amb
0.1
t
t
s
s
°
C
1
10
I
VUO 80
d(AV)M
I
2
Constants for Z
t
100
10
A
10
10
80
60
40
20
2
A
0
s
4
3
2
1
2
3
4
i
1
0
Fig. 3 I
Fig. 5 Maximum forward current
20 40 60 80 100 120 140
R
thi
0.005
0.21
0.795
0.41
(1-10 ms) per diode
at case temperature
2
t versus time
2
(K/W)
thJC
calculation:
3
VUO 80
4 5 6 7 8 9 0
T
H
0.01
0.05
0.14
0.5
t
i
t
(s)
20100503a
3 - 3
ms
°
1
C