VBO36-08NO8 IXYS, VBO36-08NO8 Datasheet - Page 2

• Manufacturer Part Number: VBO36-08NO8
• Description: DIODE BRIDGE 30A 800V FO-B-B
• Manufacturer: IXYS

Specifications of VBO36-08NO8

• Voltage - Peak Reverse (max): 800V
• Current - Dc Forward (if): 30A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: QC Terminal
• Package / Case: Screw Mount
• Vrrm, (v): 800
• Vvrms, (v): 250
• Idavm, (a): 25
• @ Tc, (°c): 85
• Ifsm, 10 Ms, Tvj = 45°c, (a): 550
• Vt0, (v): 0.8
• Rt, (mohms): 5.8
• Tvjm, (°c): 150
• Rthjc, Per Chip, (k/w): 6.2
• Rthjh, Per Chip, (k/w): 7.4
• Package Style: FO-B-B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
70
60
50
40
30
20
10
200
150
100
8
6
4
2
0
50
0
0
Fig. 4 Power dissipation vs. direct output current and ambient temperature
Fig. 1 Forward current versus
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
0.5
voltage drop per diode
150°C
10
0.01
I
FAVM
1
V
25°C
F
[A]
[V]
1.5
20
sin. 180°
rec. 120°
rec. 60°
rec. 30°
0.1
2
DC
2.5
0
t [s]
0.71
1.43
2.86
7.14
1
0.36 = R
50
Fig. 2 Surge overload current per diode
thCA
1.9
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T
amb
10
[K/W]
10
I
FSM
0
[K]
100
: crest value, t: duration
T
VJ
Z
10
Z
480
= 45°C
thJK
thJC
1
100
150
0 V
½ V
1 V
t [ms]
I
FSM
RRM
RRM
RRM
105
120
135
150
50
65
75
90
[A]
T
VJ
10
= 150°C
500
2
10
3
10
10
10
50
40
30
20
10
0
4
3
2
Fig. 3 I
1
Fig. 5 Maximum forward current
per diode or thyristor
50
at case temperature
2
t versus time (1-10 ms)
2
45°C
T
100
t [ms]
C
[°C]
4
150°C
VBO 36
sin. 180°
rec. 120°
rec. 60°
rec. 30°
150
DC
6
200
10
20100706b
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