VBO22-12NO8 IXYS, VBO22-12NO8 Datasheet - Page 2

• Manufacturer Part Number: VBO22-12NO8
• Description: DIODE BRIDGE 17A 1200V FO-B-B
• Manufacturer: IXYS

Specifications of VBO22-12NO8

• Voltage - Peak Reverse (max): 1200V
• Current - Dc Forward (if): 17A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: QC Terminal
• Package / Case: Screw Mount
• Vrrm, (v): 1200
• Vvrms, (v): 400
• Idavm, (a): 17
• @ Tc, (°c): 85
• Ifsm, 10 Ms, Tvj = 45°c, (a): 380
• Vt0, (v): 0.85
• Rt, (mohms): 12
• Tvjm, (°c): 150
• Rthjc, Per Chip, (k/w): 8.20
• Rthjh, Per Chip, (k/w): 9.40
• Package Style: FO-B-B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
30
25
20
15
10
50
40
30
20
10
0
5
0
10
8
6
4
2
Fig. 1 Forward current versus
Fig. 4 Power dissipation vs. direct output current and ambient temperature
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
voltage drop per diode
150°C
10
25°C
0,01
V
rec. 120°
rec. 60°
rec. 30°
sin. 180°
I
FAVM
F
1
DC
[V]
[A]
20
0,1
1.5
0
t [s]
0.95
9.95
1.95
3.95
0.45
1
50
Fig. 2 Surge overload current per diode
0.05
1.9
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T
10
amb
= R
0
I
thCA
[K]
FSM
[K/W]
10
100
: Crest value. t: duration
T
VJ
10
380
= 45°C
1
0 V
½ V
1 V
t [ms]
I
FSM
Z
Z
RRM
RRM
RRM
thJK
thJC
150
[A]
T
110
130
150
VJ
50
70
90
10
= 150°C
340
2
10
3
10
10
30
20
10
3
2
0
1
Fig. 3 I
Fig. 5 Maximum forward current
T
VJ
per diode or thyristor
at case temperature
50
2
= 45°C
t versus time (1-10 ms)
2
T
t [ms]
C
100
[°C]
T
VJ
4
= 150°C
VBO 22
sin. 180°
rec. 120°
rec. 60°
rec. 30°
150
6
DC
10
200
20100706c
2 - 2