TLP624F Toshiba, TLP624F Datasheet - Page 2

• Manufacturer Part Number: TLP624F
• Description: Transistor Output Optocouplers TR LOW INPUT CURRENT
• Manufacturer: Toshiba

Specifications of TLP624F

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 55 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 1200 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Recommended Operating Conditions
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation(1 Circuit)
Total package power dissipation derating
(Ta ≥ 25°C, 1 Circuit)
Isolation voltage
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 1) Device considered a two terminal device: LED side pins shorted together, and detector side pins shorted
Supply voltage
Forward current
Collector current
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Forward current
Forward current detating
Pulse forward current
Power dissipation(1 Circuit)
Power dissipation derating
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Collector current
Collector power dissipation(1 circuit)
Collector power dissipation derating
(Ta ≥ 25°C, 1 Circuit)
Junction temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
together.
Characteristic
(Ta ≥ 25°C, 1 Circuit)
Characteristic
(Ta = 25°C)
Symbol
V
T
I
I
CC
opr
C
F
Min.
−25
―
―
―
(Note 1)
2
Typ.
1.6
―
5
1
ΔP
ΔP
ΔP
ΔI
Symbol
Max.
V
V
P
BV
T
T
24
20
10
75
F
I
C
P
V
P
D
CEO
ECO
P
T
FP
I
I
T
T
stg
opr
sol
C
F
/ °C
D
R
C
T
j
/
j
/ °C
/ °C
S
TLP624,TLP624−2,TLP624−4
°C
−0.7(Ta ≥ 39°C) −0.5(Ta ≥ 25°C) mA / °C
Unit
mA
mA
°C
V
5000(AC, 1min., RH≤60%)
TLP624
1(100μs, pulse, 100pps)
−1.0
−1.5
−2.5
100
150
250
60
−55~125
−55~100
260(10s)
Rating
125
125
55
50
5
7
TLP624−2
TLP624−4
−0.7
−1.0
−1.5
100
150
50
70
2007-10-01
mW / °C
mW / °C
mW / °C
Vrms
Unit
mW
mW
mW
mA
mA
°C
°C
°C
°C
°C
A
V
V
V