H11N3FR2VM Fairchild Semiconductor, H11N3FR2VM Datasheet - Page 3

• Manufacturer Part Number: H11N3FR2VM
• Description: High Speed Optocouplers 6-Pin Octocoupler
• Manufacturer: Fairchild Semiconductor

Specifications of H11N3FR2VM

• Isolation Voltage: 5300 Vrms
• Maximum Continuous Output Current: 50 mA
• Maximum Fall Time: 12 ns
• Maximum Forward Diode Current: 30 mA
• Maximum Rise Time: 7.5 ns
• Output Device: Logic Gate Photo IC
• Configuration: 1 Channel
• Maximum Baud Rate: 5 MBps
• Maximum Forward Diode Voltage: 2 V
• Maximum Reverse Diode Voltage: 6 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2005 Fairchild Semiconductor Corporation
*Typical values at T
NOTES:
1. Maximum I
2. H11N1: R
TRANSFER CHARACTERISTICS
DC Characteristics
Supply Current
Output Voltage, low
Turn-On Threshold Current
Turn-Off Threshold Current
Hysteresis Ratio
AC Characteristics
Propagation delay time
High to Low
Rise Time
Propagation delay time
Low to High
Fall time
Data Rate
ISOLATION CHARACTERISTICS
Parameters
Input-Output Isolation Voltage
Isolation Capacitance
Isolation Resistance
SWITCHING SPEED
H11N1-M
require the LED to be driven at a current greater than 3.2mA to guarantee the device will turn on. A 10% guard band is
recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30mA.
H11N2: R
H11N3: R
E
E
E
F(ON)
= 910 Ω
= 560 Ω
= 240 Ω
A
is the maximum current required to trigger the output. For example, a 3.2mA maximum trigger current would
= 25°C
I
R
R
note 1
R
R
C=120pF, t
Fig. 1
C=120pF, t
Fig. 1
C=120pF, t
Fig. 1
C=120pF, t
Fig. 1
F
L
L
L
L
= 10mA, V
=270 Ω ,V
=270 Ω , V
=270 Ω , V
=270 Ω , V
V
V
f = 60 Hz, t =1 sec.
I-O
I-O
Test Conditions
Test Conditions
Test Conditions
= 0V, f = 1 MHz
= ±500 VDC
P
P
P
P
CC
CC
CC
CC
=1µs, R
=1µs, R
=1µs, R
=1µs, R
CC
HIGH SPEED LOGIC OPTOCOUPLERS
=5V, I
= 5V
= 5V
= 5V
= 5V
F
E
E
E
E
=I
: Note 2
: Note 2
: Note 2
: Note 2
F(on)
H11N2-M
Page 3 of 9
max.
Symbol
C
R
V
I
F(off)
Symbol
Symbol
ISO
ISO
ISO
I
CC(on)
I
I
t
t
V
F(on)
F(off)
PHL
PLH
t
OL
t
/I
r
f
F(on)
7500
H11N1-M
H11N2-M
H11N3-M
10
Min
Device
Device
11
All
All
All
All
All
All
All
All
All
Typ*
0.65
Min
Min
0.4
0.8
2.3
4.1
0.3
Typ*
100
150
Typ
6.5
7.5
12
5
Max
0.6
6-PIN DIP
H11N3-M
0.95
Max
Max
330
330
0.5
3.2
10
10
5
V
Units
6/15/05
PEAK
pF
Ω
Units
Units
MHz
mA
mA
mA
ns
ns
ns
ns
V