QSE159E3R0 Fairchild Semiconductor, QSE159E3R0 Datasheet - Page 3

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QSE159E3R0

Manufacturer Part Number
QSE159E3R0
Description
Photodiodes Optologic
Manufacturer
Fairchild Semiconductor
Type
Optoschmittr
Datasheet

Specifications of QSE159E3R0

Peak Wavelength
880 nm
Half Intensity Angle Degrees
50 deg
Maximum Power Dissipation
100 mW
Maximum Rise Time
100 ns
Maximum Fall Time
100 ns
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2004 Fairchild Semiconductor Corporation
QSE156/C, QSE157/C, QSE158/C, QSE159/C Rev. 1.0.1
Electrical Characteristics
Note:
5. λ = 880nm (AlGaAs).
QSE156/C (Buffer Totem Pole)
QSE157/C (Inverter Totem Pole)
QSE158/C (Buffer Open Collector)
QSE159/C (Inverter Open Collector)
QSE156/C, QSE157/C
QSE158/C, QSE159/C
Ee(+)/Ee(-) Hysteresis Ratio
t
t
Symbol
PHL
PHL
Ee(+)
t
t
V
V
V
V
V
V
R
R
I
I
I
CC
OH
OH
OH
OH
, t
, t
OL
OL
OL
OL
, t
, t
PLH
PLH
F
F
Positive Going Threshold
Irradiance
Supply Current
Peak to Peak Ripple which
will Cause False Triggering
High Level Output Voltage
Low Level Output Voltage
High Level Output Voltage
Low Level Output Voltage
High Level Output Current
Low Level Output Voltage
High Level Output Current
Low Level Output Voltage
Output Rise, Fall Times
Propagation Delay
Output Rise, Fall Times
Propagation Delay
Parameter
(5)
(5)
(T
A
(5)
(5)
(5)
= -40°C to +85°C, V
(5)
T
Ee = 0 or 0.3mW/cm
f = DC to 50MHz
Ee = 0.3mW/cm
Ee = 0, I
Ee = 0, I
Ee = 0.3mW/cm
Ee = 0.3mW/cm
Ee = 0, I
Ee = 0, V
Ee = 0.3mW/cm
Ee = 0 or 0.3mW/cm
R
Ee = 0 or 0.3mW/cm
R
f = 10kHz, DC = 50%,
f = 10kHz, DC = 50%,
A
L
L
= 25°C
= 360 Ω
= 360 Ω
Test Conditions
OL
OH
OL
OH
(5)
(5)
= 16mA
= 16mA
= -10mA
= 30V
3
CC
2
2
2
2
, I
, I
, V
, I
= 4.5V to 16V)
OH
OL
OL
OH
2
2
2
,
,
= 16mA
= 16mA
= -10mA
= 30V
V
V
CC
CC
0.025
Min.
1.10
– 2.1
– 2.1
Typ.
6.0
6.0
Max.
0.250
2.00
2.00
0.40
0.40
0.40
0.40
100
100
100
5.0
70
www.fairchildsemi.com
mW/cm
Units
mA
µA
µA
nS
µS
nS
µS
V
V
V
V
V
V
V
2

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