PD70-01C/TR10 Everlight Electronics CO., LTD, PD70-01C/TR10 Datasheet - Page 3

• Manufacturer Part Number: PD70-01C/TR10
• Description: Photodiodes Photo Transistor
• Manufacturer: Everlight Electronics CO., LTD
• Type: Chipr

Specifications of PD70-01C/TR10

• Photodiode Material: Silicon
• Peak Wavelength: 940 nm
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 25 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 50 ns
• Maximum Fall Time: 50 ns
• Package / Case: SMD-2
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 32V
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 25uA
• Rise Time: 50ns
• Fall Time: 50ns
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electro-Optical Characteristics (Ta=25℃)
Rang Of Spectral Bandwidth
Wavelength Of Peak Sensitivity
Open-Circuit Voltage
Short- Circuit Current
Reverse Light Current
Reverse Dark Current
Reverse Breakdown Voltage
Total Capacitance
Everlight Electronics Co., Ltd.
Device No：DTD-700-179
Rise/Fall Time
Parameter
Symbol
Prepared date：08-26-2005
λ
V
B
http:\\www.everlight.com
λ
t
I
I
C
I
r
SC
VR
/t
OC
D
L
0.5
t
P
f
Ee=5mW/cm
Ee=1mW/cm
Ee=1mW/cm
Ee=0mW/cm
Ee=0mW/cm
Ee=0mW/cm
λp=940nm
λp=940nm
λp=870nm
I
Condition
R
R
V
f=1MHz
V
=100μA
V
V
L
R
R
=1KΩ
R
R
=10V
=10V
---
---
=5V
=3V
2
2
2
2
2
2
Min
Prepared by：JAINE TSAI
400
Rev 1
---
---
---
17
---
32
---
---
PD70-01C/TR10
50/50
Typ
0.35
940
170
---
35
25
25
5
Page: 3 of 10
1100
Max
---
---
---
---
30
---
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Unit
μA
μA
nm
nm
nA
pF
nS
V
V