SI4276DY-T1-E3 Vishay, SI4276DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4276DY-T1-E3
• Description: MOSFET 2N-CH 30V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4276DY-T1-E3

• Input Capacitance (ciss) @ Vds: 1000pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Power - Max: 3.6W, 2.8W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 66599
S10-1289-Rev. A, 31-May-10
SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
J
a
= 25 °C, unless otherwise noted
Symbol
t
t
t
t
V
d(on)
d(off)
d(on)
d(off)
I
Q
SM
I
t
t
t
t
t
t
t
SD
S
rr
a
b
r
f
r
f
rr
I
I
F
F
I
I
= 7.7 A, dI/dt = 100 A/µs, T
= 5.5 A, dI/dt = 100 A/µs, T
I
I
D
D
D
D
≅ 7.6 A, V
≅ 5.5 A, V
≅ 7.6 A, V
≅ 5.5 A, V
V
V
V
V
DD
DD
DD
DD
= 15 V, R
= 15 V, R
= 15 V, R
= 15 V, R
T
Channel 1
Channel 2
Channel 1
Channel 2
Channel 1
Channel 2
I
I
Test Conditions
GEN
GEN
GEN
GEN
S
S
C
= 7.6 A
= 5.5 A
= 25 °C
= 4.5 V, R
= 4.5 V, R
= 10 V, R
= 10 V, R
L
L
L
L
= 2.7 Ω
= 2.7 Ω
= 2 Ω
= 2 Ω
g
g
g
g
J
J
= 1 Ω
= 1 Ω
= 1 Ω
= 1 Ω
= 25 °C
= 25 °C
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Min.
Typ.
0.82
0.85
10
20
14
11
18
20
12
11
11
10
10
13
8
7
7
9
Vishay Siliconix
4
8
7
8
7
6
7
6
a
Si4276DY
Max.
1.2
2.3
1.2
16
20
30
14
21
20
27
14
50
30
20
16
20
14
16
20
20
14
30
20
12
3
8
www.vishay.com
Unit
nC
ns
ns
ns
A
V
3