TFDU4100-TR3 Vishay, TFDU4100-TR3 Datasheet - Page 5

• Manufacturer Part Number: TFDU4100-TR3
• Description: Infrared Transceivers SIR 115.2 kbits/s
• Manufacturer: Vishay
• Type: TX/RXr

Specifications of TFDU4100-TR3

• Wavelength: 900 nm
• Continual Data Transmission: 115.2 Kbit/s
• Radiant Intensity: 140 mW/sr
• Half Intensity Angle Degrees: 48 deg
• Pulse Width: 4 us
• Maximum Rise Time: 200 ns, 600 ns
• Maximum Fall Time: 200 ns, 600 ns
• Led Supply Voltage: - 0.5 V to 6 V
• Maximum Forward Current: 100 mA
• Operating Voltage: 2 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Dimensions: 9.7 mm x 4.7 mm x 4 mm
• Data Rate: 115.2Kbps
• Peak Wavelength: 900nm
• Angle Of Half Sensitivity: 48°
• Package Type: Ultra Small Profile
• Fall Time: 600/200ns
• Rise Time: 600/1400ns
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Supply Voltage (min): 2/2.7V
• Operating Supply Voltage (max): 5.5V
• Mounting: Surface Mount
• Pin Count: 8
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Recommended Circuit Diagram
The only required components for designing an IrDA
compatible application using Vishay Semiconductors
SIR transceivers are a current limiting resistor to the
IRED. However, depending on the entire system
design and board layout, additional components may
be required (see figure 1). It is recommended that the
capacitors C1 and C2 are positioned as near as pos-
sible to the transceiver power supply pins. A tantalum
capacitor should be used for C1, while a ceramic
capacitor should be used for C2 to suppress RF
noise. Also, when connecting the described circuit to
the power supply, low impedance wiring should be
used.
R1 is used for controlling the current through the IR
emitter. For increasing the output power of the IRED,
the value of the resistor should be reduced. Similarly,
to reduce the output power of the IRED, the value of
the resistor should be increased. For typical values of
R1 (see figures 2 and 3), e.g. for IrDA compliant oper-
ation (V
14 Ω is recommended. The upper drive current limita-
tion is dependent on the duty cycle and is given by the
absolute maximum ratings on the data sheet and the
eye safety limitations given by IEC825.1. R2, C1 and
C2 are optional and dependent on the quality of the
supply voltage V
Document Number 82514
Rev. 1.6, 03-Jul-06
Half-width of emission spectrum
Optical rise time, fall time
Optical overshoot
Rising edge peak-to-peak jitter
of optical output pulse
18092
V
V
GND
RXD
TXD
CC2
CC1
SC
CC2
Figure 1. Recommended Application Circuit
Parameter
= 5 V ± 5 %), a current control resistor of
Note: outlined components are optional depending
C1
R2
CC1
on the quality of the power supply
R1
C2
and injected noise. An unstable
IRED
Cathode
RXD
V
GND
CC1
Over a period of 10 bits,
independent of information
content
/SD
TFDx4x00
Test Conditions
Anode
IRED
TXD
SC
NC
®
t
power supply with dropping voltage during transmis-
sion may reduce sensitivity (and transmission range)
of the transceiver.
Symbol
ropt
14377
, t
t
14378
j
fopt
500
450
400
350
300
250
200
150
100
50
760
720
680
640
600
560
520
480
440
400
360
320
280
240
200
160
120
0
80
40
0
6
0
V
±15° off axis, max. V
cc
Min
±15° off axis, max. V
= 2.7 V, min. intensity
1
V
Current Control Resistor (
8
cc
Current Control Resistor (
max. V
= 4.75 V, min. ef
2
Figure 2. I
Figure 3. I
V
10
cc
axis, min. V
CEsat
3
=3.3 V, max. intensity on
Vishay Semiconductors
max. efficiency, center,
Typ.
200
min. V
45
4
V
F
, max. V
cc
e
e
12
F
,
F
ficiency
vs. R1
vs. R1
= 5.25 V,
, min. V
5
F
, min. V
CEsat
6
Ω
14
,
Ω
CEsat
Max
)
600
0.2
CEsat
TFDU4100
)
25
7
16
www.vishay.com
8
Unit
nm
ns
µs
%
5