SDP8406-002 Honeywell Sensing and Control, SDP8406-002 Datasheet - Page 2

• Manufacturer Part Number: SDP8406-002
• Description: TRANSISTOR, PHOTO, NPN, SIDE LOOKING
• Manufacturer: Honeywell Sensing and Control

Specifications of SDP8406-002

• Transistor Polarity: NPN
• Power Consumption: 100mW
• Viewing Angle: 50°
• No. Of Pins: 2
• Peak Reflow Compatible (260 C): Yes
• Half Angle: 50°
• Voltage, Vcc: 30V
• Rise Time: 15µs
• Voltage - Collector Emitter Breakdown (max): 30V
• Current - Collector (ic) (max): 3.6mA
• Current - Dark (id) (max): 100nA
• Wavelength: 935nm
• Power - Max: 100mW
• Mounting Type: Through Hole
• Orientation: Side View
• Package / Case: Radial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (5 sec)
Notes
0.78 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SDP8406
Silicon Phototransistor
1. Derate linearly from 25¡C free-air temperature at the rate of
PARAMETER
SYMBOL
30 V
5 V
100 mW [À]
-40¡C to 85¡C
-40¡C to 85¡C
240¡C
MIN
TYP
MAX
UNITS
SCHEMATIC
TEST CONDITIONS
121