OP521DA OPTEK TECHNOLOGY, OP521DA Datasheet - Page 2

• Manufacturer Part Number: OP521DA
• Description: TRANSISTOR, PHOTO, NPN, 935NM, 1206
• Manufacturer: OPTEK TECHNOLOGY

Specifications of OP521DA

• Transistor Polarity: NPN
• Wavelength Typ: 935nm
• Power Consumption: 100mW
• Viewing Angle: 150°
• No. Of Pins: 2
• Half Angle: 160°
• Rise Time: 50µs
• Transistor Type: Darlington
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Silicon Photo Darlington in Miniature 1206 SMD
Package
OP520DA, OP521DA
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: [phone] FAX: [phone] [e-mail] www.optekinc.com
Absolute Maximum Ratings
Notes:
1.
2.
Electrical Characteristics
3.
4.
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
Solder time less than 5 seconds at temperature extreme.
De-rate linearly at 2.17 mW/° C above 25° C.
Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the photo darlington being tested.
To Calculate typical collector dark current in µA, use the formula I
SYMBOL
V
V
V
I
(BR)CEO
(BR)ECO
CE(SAT)
40
35
30
25
20
15
10
I
C(ON)
t
CEO
r
5
, t
0
f
Normalized at E
Conditions: V
= 935nm, T
Relative Collector Current-I
vs. Irradiance-Ee (mW/cm
Irradiance- Ee (mW/cm
0.5
A
CE
= 25 °C
Spectral range of sensitivity
On-State Collector Current
Collector-Emitter Saturation Voltage
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
OP521DA
OP520DA
Rise and Fall Times
e
= 5V,
= 1mW/cm
2
1.0
PARAMETER
(T
A
1.5
T
= 25rC unless otherwise noted)
A
2
)
= 25
C
(mA)
2
)
o
C unless otherwise noted
2.0
MIN
10.0
400
700
35
5
CEO
= 10
TYP
50
(0.04 T
140%
130%
120%
110%
100%
A
90%
80%
70%
-3/4)
-25
MAX
1100
1100
200
1.7
where T
Normalized at T
Conditions: V
= 935nm, T
Relative On-State Collector Current
A
UNITS
0
is the ambient temperature in ° C.
Temperature— T
mA
nm
nA
µs
A
CE
V
V
V
= 25 °C
vs. Temperature—(T
A
= 5V,
= 25°C .
25
V
I
CE
C
= 1mA, E
= 5.0V, E
V
50
I
I
I
C
CE
C
E
CONDITIONS
= 1mA, R
= 100µA, E
= 100µA, E
A
= 5.0V, E
V
(°C)
CE
e
e
= 5.0mW/cm
= 5.0V
75
= 0.5mW/cm
-40° C to +100° C
80°C
-25° C to +85° C
L
e
= 1K
A
Issue A
e
e
= 0
)
-40°C
= 0
= 0
100 mW
Page 2 of 4
100
(4)
260° C
30 mA
2 (3)
2 (3)
03.08
35V
5 V
(1)
(2)