BPW34-B OSRAM, BPW34-B Datasheet - Page 4

DIODE, PHOTO, 850NM, 60°

BPW34-B

Manufacturer Part Number
BPW34-B
Description
DIODE, PHOTO, 850NM, 60°
Manufacturer
OSRAM
Datasheet

Specifications of BPW34-B

Wavelength Typ
850nm
Sensitivity
0.2A/W
Half Angle
60°
Dark Current
2nA
Diode Case Style
DIP
No. Of Pins
2
Operating Temperature Range
-40°C To +85°C
Length/height, External
4mm
Active Area
7.45mm
Lead Spacing
5.1mm
Rohs Compliant
Yes
External Depth
2.2mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Relative Spectral Sensitivity
S
Dark Current
I
Directional Characteristics
S
2002-01-24
R
rel
rel
S
=
rel
=
=
100
R
4000
3000
2000
1000
f
50
60
70
80
90
100
80
60
40
20
pA
f
f
%
(
0
400
0
V
( )
( )
0
R
),
1.0
E
40
600
= 0
5
0.8
800
10
30
0.6
1000
15
20
OHF01001
OHF00080
V
nm
V
0.4
R
1200
20
10
1.0
0.8
0.6
0.4
0.2
0
0
0
Photocurrent
Open-Circuit Voltage
Capacitance
C
C
=
P
100
pF
10
80
70
60
50
40
30
20
10
20
10
10
10
10
f
0
10
A
-1
10
3
2
1
0
(
V
-2
0
R
),
40
10
f
10
= 1 MHz,
-1
1
60
I
P
10
10
=
4
0
V
2
O
P
f
80
(
E
E
10
v
V
10
),
= 0
1
100
O
3
OHF00081
V
V
OHF01066
E
R
=
V
OHF01402
lx
V
R
f
10
= 5 V
10
(
120
2
E
10
10
10
10
10
mV
4
v
4
3
2
1
0
)
V
O
Total Power Dissipation
P
Dark Current
I
R
tot
=
P
tot
R
=
BPW 34 B, BPW 34 B
10
f
10
10
10
10
mW
160
140
120
100
nA
80
60
40
20
f
(
-1
0
3
2
1
0
T
0
0
(
T
A
),
A
)
V
20
20
R
= 5 V,
40
40
E
60
60
= 0
80 ˚C 100
80 ˚C 100
OHF00958
OHF00082
T
T
A
A

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