4N25GV Vishay, 4N25GV Datasheet - Page 3

• Manufacturer Part Number: 4N25GV
• Description: OPTOCOUPLER, TRANSISTOR, 5300VRMS
• Manufacturer: Vishay

Specifications of 4N25GV

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 32V
• Opto Case Style: DIP
• No. Of Pins: 6
• Mounting Type: Through Hole
• Isolation Voltage: 5kV
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 32 V
• Maximum Collector Emitter Saturation Voltage: 0.3 V
• Current Transfer Ratio: 100 %
• Maximum Forward Diode Voltage: 1.4 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
(1)
Document Number: 83530
Rev. 2.0, 26-Oct-09
CURRENT TRANSFER RATIO
PARAMETER
I
MAXIMUM SAFETY RATINGS
PARAMETER
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
Insulation resistance
C
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
/I
F
94 9182
300
250
200
150
100
50
0
0
T
25
si
Fig. 1 - Derating Diagram
- Safety Temperature (°C)
IR-diode
I
si
50
(mA)
P
Phototransistor
si
75
(mW)
V
V
CE
CE
TEST CONDITION
For technical questions, contact:
100
V
V
= 10 V, I
= 10 V, I
T
IO
IO
amb
(construction test only)
TEST CONDITION
t
Tr
= 500 V, T
= 500 V, T
TEST CONDITION
Optocoupler, Phototransistor Output
125
100 %, t
= 100 °C
= 60 s, t
(see figure 2)
(1)
V
F
F
IO
= 10 mA,
= 10 mA
150
= 500 V
test
test
amb
amb
= 1 s
= 10 s,
= 100 °C
= 150 °C
4N25GV
4N35GV
4N35GV
4N25V
4N35V
4N35V
SYMBOL
PART
V
P
[e-mail]
SYMBOL
IOTM
T
I
diss
4N25V, 4N25GV, 4N35V, 4N35GV
F
si
V
V
V
R
R
R
IOTM
pd
pd
IO
IO
IO
Fig. 2 - Test Pulse Diagram for Sample Test according to
13930
V
SYMBOL
V
V
IOWM
IOTM
IORM
V
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
Pd
0
1600
6000
1400
MIN.
10
10
10
12
11
9
t
1
DIN EN 60747-; IEC 60747
MIN.
100
20
40
Vishay Semiconductors
TYP.
t
t
t
1
3
stres
t
, t
test
, t
TYP.
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
TYP.
100
150
MAX.
130
265
150
MAX.
6
MAX.
t
2
t
www.vishay.com
3
t
t
stres
test
t
t
4
UNIT
UNIT
mW
mA
kV
°C
UNIT
V
V
V
Ω
Ω
Ω
%
%
%
141