MMBT5401-TP Micro Commercial Components (MCC), MMBT5401-TP Datasheet - Page 2

• Manufacturer Part Number: MMBT5401-TP
• Description: 150V, 600mA, 300mW PNP Transistor, SOT-23 / 7" REEL
• Manufacturer: Micro Commercial Components (MCC)
• Type: Small Signalr

Specifications of MMBT5401-TP

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Current, Collector: 0.6 A
• Current, Gain: 80
• Frequency: 100 MHz
• Package Type: SOT-23
• Polarity: PNP
• Power Dissipation: 0.3 W
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 150 V
• Voltage, Collector To Base: 160 V
• Voltage, Collector To Emitter: 150 V
• Voltage, Collector To Emitter, Saturation: 0.5 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: RoHS Compliant part
• Other names: MMBT5401-TPTR

Micro Commercial Components
Features
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Electrical Characteristics @ 25
OFF CHARACTERISTICS
I
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
EBO
V
V
V
I
h
h
h
V
V
f
CBO
Symbol
T
FE-1
FE-2
FE-3
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
M C C
Collector Current: I
Collector-Base Voltage: V
Operating And Storage Temperatures –55
Capable of 0.3Watts of Power Dissipation
Marking: 2L
Classificatio Rating 94-0 and MSL Rating 1
Case Material:Molded Plastic. UL Flammability
Coll e ctor -Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Base-Emitter Saturation Voltage
(I
(I
(I
(V
(V
(V
(V
(V
(I
(I
(I
C
C
E
C
C
C
=1.0mAdc, I
=100uAdc, I
=10uAdc, I
=50mAdc, I
=50mAdc,I
=10mAdc, V
CB
EB
CE
CE
CE
=120Vdc, I
=4.0Vdc, I
=5.0Vdc, I
=5.0Vdc, I
=5.0Vdc, I
CM
Parameter
B
C
B
=0.6A
=5.0mAdc)
B
=0)
E
=5.0mAdc)
C
C
C
C
CE
=0)
=0)
E
=0)
=1.0mAdc)
=10mAdc)
=50mAdc)
=0)
=5.0Vdc, f=30MHz)
(BR)CBO
TM
O
=160V
C Unless Otherwise Specified
O
C to 150
Min
150
160
5.0
100
100
---
---
---
---
80
50
O
C
Max
0.1
0.1
200
0.5
1.0
---
---
---
---
---
---
1 of 2
Units
uAdc
uAdc
Vdc
Vdc
MHz
Vdc
Vdc
Vdc
---
---
---
G
DIM
C
D
G
H
A
B
E
F
J
K
F
K
INCHES
.0005
MIN
.110
.083
.047
.035
.070
.018
.035
.003
.015
.035
.900
Encapsulate
MMBT5401
PNP Plastic
A
E
Transistor
.037
.950
Suggested Solder
D
.031
.800
SOT-23
.0039
MAX
.120
.098
.055
.041
.081
.024
.044
.007
.020
Pad Layout
DIMENSIONS
.950
.037
H
C
B
MIN
2.80
2.10
1.20
1.78
.013
.085
.89
.45
.89
.37
MM
J
2.000
.079
MAX
B
3.04
2.64
1.40
1.03
2.05
.100
1.12
.180
.60
.51
C
inches
mm
NOTE
E