IRF9510STRR Vishay, IRF9510STRR Datasheet
IRF9510STRR
Specifications of IRF9510STRR
Available stocks
Related parts for IRF9510STRR
IRF9510STRR Summary of contents
Page 1
... Operating Temperature Single • Fast Switching • Compliant to RoHS Directive 2002/95/EC S DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effectiveness. 2 The D PAK (TO-263 surface mount power package capable of accommodating die size up to HEX-4. It provides ...
Page 2
... IRF9510S, SiHF9510S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... Drain-to-Source Voltage ( 91071_02 Fig Typical Output Characteristics, T Document Number: 91073 S10-1728-Rev. B, 02-Aug- °C C 91073_03 = 25 ° µs Pulse Width T = 150 °C C 91071_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF9510S, SiHF9510S Vishay Siliconix 1 10 ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig ...
Page 4
... IRF9510S, SiHF9510S Vishay Siliconix 350 MHz iss rss gd 280 oss ds 210 140 Drain-to-Source Voltage ( 91073_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 400 250 100 Total Gate Charge (nC) 91071_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91073_07 Fig Typical Source-Drain Diode Forward Voltage ...
Page 5
... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91073 S10-1728-Rev. B, 02-Aug-10 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF9510S, SiHF9510S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) ...
Page 6
... IRF9510S, SiHF9510S Vishay Siliconix 91073_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 700 Top 600 Bottom 500 400 300 200 100 125 25 75 100 150 50 Starting T , Junction Temperature (° 4.0 A 175 Current regulator Same type as D.U.T. 50 kΩ ...
Page 7
... Inductor current Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91073. ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...