CM600HA-28H Powerex Inc, CM600HA-28H Datasheet - Page 2

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CM600HA-28H

Manufacturer Part Number
CM600HA-28H
Description
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.4kV V(BR)CES,600A I(C)
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM600HA-28H

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1400V
Vce(on) (max) @ Vge, Ic
4.2V @ 15V, 600A
Current - Collector (ic) (max)
600A
Current - Collector Cutoff (max)
2mA
Input Capacitance (cies) @ Vce
120nF @ 10V
Power - Max
4100W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM600HA-28H
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM600HA-28H
Manufacturer:
MITSUBISHI
Quantity:
726
Part Number:
CM600HA-28H
Quantity:
55
212
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HA-28H
Single IGBTMOD™ H-Series Module
600 Amperes/1400 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
V
C
C
d(on)
d(off)
GES
th(c-f)
CES
Q
j
th(j-c)
th(j-c)
Q
t
oes
FM
t
ies
res
t
= 25 C unless otherwise specified
rr
r
f
G
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
C
CC
V
V
I
I
E
E
GE
GE1
= 600A, V
= 800V, I
= 600A, di
= 600A, di
V
V
V
I
I
C
= 0V, V
C
I
CC
CE
GE
E
= V
= 60mA, V
= 600A, V
= 600A, V
Test Conditions
Test Conditions
Test Conditions
= V
= 800V, I
= V
GE2
Per FWDi
Per IGBT
GE
C
CE
CES
GES
E
E
= 600A, V
= 15V, R
/dt = –1200A/ s
/dt = –1200A/ s
= 15V, T
= 10V, f = 1MHz
, V
, V
GE
CE
C
GE
GE
CE
= 600A,
= 15V
= 10V
= 0V
= 0V
G
= 0V
j
GE
= 150 C
= 2.1
Symbol
V
V
V
T
I
I
= 15V
GES
RMS
CES
CM
P
I
FM
T
I
stg
C
F
d
j
Min.
Min.
Min.
5.0
CM600HA-28H
–40 to 150
–40 to 125
1200*
1200*
1400
4100
2500
600
600
560
95
26
3060
20
2.95
Typ.
Typ.
Typ.
6.0
3.1
6.0
0.035
4.2**
Max.
Max.
Max.
0.03
0.06
120
350
700
500
500
300
2.0
0.5
8.0
3.8
24
42
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Volts
Volts
Units
in-lb
in-lb
Volts
Volts
Volts
Volts
Units
Units
Units
C
C
C/W
C/W
C/W
mA
nC
nF
nF
nF
ns
ns
ns
ns
ns
C
A

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