CM600DU-24F Powerex Inc, CM600DU-24F Datasheet - Page 3

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CM600DU-24F

Manufacturer Part Number
CM600DU-24F
Description
TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.2kV V(BR)CES,600A I(C)
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM600DU-24F

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.55V @ 15V, 600A
Current - Collector (ic) (max)
600A
Current - Collector Cutoff (max)
2mA
Input Capacitance (cies) @ Vce
230nF @ 10V
Power - Max
1540W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM600DU-24F
Manufacturer:
MITS
Quantity:
1 000
Part Number:
CM600DU-24F
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM600DU-24F
Quantity:
55
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600DU-24F
Dual IGBTMOD™ F-Series Module
600 Amperes/1200 Volts
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time*
Diode Reverse Recovery Charge*
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance
Contact Thermal Resistance
External Gate Resistance
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**If you use this value, R
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
th(f-a)
should be measured just under the chips.
R
R
R
Symbol
Symbol
R
th(j-c')
t
t
th(j-c)
th(j-c)
C
C
C
d(on)
d(off)
th(c-f)
Q
R
j
t
oes
t
ies
res
t
rr
r
f
G
= 25 C unless otherwise specified
rr
Q
R
Q
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
Per FWDi 1/2 Module, T
Per IGBT 1/2 Module, T
T
c
Reference Point Under Chips
Point per Outline Drawing
Point per Outline Drawing
V
V
CC
Per IGBT 1/2 Module
V
Switching Operation
CE
GE1
Inductive Load
Test Conditions
= 600V, I
Test Conditions
= 10V, V
R
I
E
= V
G
= 600A
= 1.0 ,
GE2
C
GE
= 15V,
= 600A,
c
= 0V
c
Reference
Reference
Min.
Min.
1.0
43.2
Typ.
Typ.
0.010
230
450
200
800
300
500
10
52
Max.
Max.
6
0.081
0.11
0.032** C/W
Units
Units
C/W
C/W
C/W
ns
ns
ns
ns
ns
nf
nf
nf
C
3
3

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