CM150DY-24NF Powerex Inc, CM150DY-24NF Datasheet - Page 2

• Manufacturer Part Number: CM150DY-24NF
• Description: IGBT Module
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM150DY-24NF

• Power Dissipation Pd: 780W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Continuous Collector Current Ic: 150A
• Collector Emitter Saturation Voltage Vce(sat): 2.5V
• Current Rating: 150A
• Voltage Rating: 1.2kV
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 35nF @ 10V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 150A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B-3015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM150DY-24NF
Dual IGBTMOD™ NF-Series Module
150 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current*** (DC, T
Peak Collector Current
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
*Pulse width and repetition rate should be such that device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)
*** Tc' measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips
C
= 25 C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
' = 110 C)
C
= 25 C, T
j
= 25 C unless otherwise specified
j
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
CE(sat)
150 C)
t
t
I
I
C
GE(th)
C
V
C
d(on)
d(off)
GES
CES
Q
j
Q
t
oes
EC
t
ies
res
t
= 25 C unless otherwise specified
rr
r
f
G
rr
V
I
I
C
CC
V
C
GE1
= 150A, V
= 150A, V
= 600V, I
V
V
V
I
C
V
I
CC
Switching Operation,
CE
GE
= V
E
CE
= 15mA, V
= 150A, V
Inductive Load
Test Conditions
Test Conditions
= V
= 600V, I
= V
GE2
j
) does not exceed T
= 10V, V
I
E
GE
C
GE
CES
GES
= 150A
= 15V, R
= 150A, V
= 15V, T
= 15V, T
, V
, V
CE
C
GE
GE
GE
CE
= 150A,
= 10V
= 0V
= 0V
G
= 0V
= 0V
j
j
GE
= 125 C
= 2.1 ,
= 25 C
Symbol
V
V
V
T
I
j(max)
I
= 15V
GES
P
CES
CM
EM
—
—
—
T
I
ISO
I
stg
E
C
C
j
rating.
Min.
Min.
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM150DY-24NF
–40 to 150
–40 to 125
1200
2500
300*
300*
150
150
780
310
30
40
1000
20
Typ.
Typ.
7.0
1.8
2.0
7.5
—
—
—
—
—
—
—
—
—
—
—
Max.
Max.
120
450
350
150
1.0
0.5
8.0
2.5
3.2
—
—
—
35
80
3
0.68
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Volts
Volts
Units
in-lb
in-lb
Volts
Volts
Volts
Volts
Units
Units
C
C
mA
nC
ns
ns
ns
ns
ns
nf
nf
nf
A
C