2N3906 MULTICOMP, 2N3906 Datasheet

BIPOLAR TRANSISTOR, PNP, -40V TO-92

2N3906

Manufacturer Part Number
2N3906
Description
BIPOLAR TRANSISTOR, PNP, -40V TO-92
Manufacturer
MULTICOMP
Datasheet
1.2N3906.pdf (6 pages)

Specifications of 2N3906

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
40V
Transition Frequency Typ Ft
250MHz
Power Dissipation Pd
625mW
Dc Collector Current
200mA
Dc Current Gain Hfe
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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2001 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
D
C
CEO
CBO
EBO
J
JC
JA
Thermal Characteristics
*
**
, T
PNP General Purpose Amplifier
C
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 A to 100 mA.
Absolute Maximum Ratings*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
B
stg
E
2N3906
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
TO-92
Characteristic
Parameter
T
MMBT3906
A
= 25°C unless otherwise noted
SOT-23
Mark: 2A
C
T
A
= 25°C unless otherwise noted
B
2N3906
83.3
625
200
5.0
E
*MMBT3906
2
.
Max
350
357
2.8
-55 to +150
Value
PZT3906
SOT-223
200
5.0
40
40
C
**PZT3906
1,000
2N3906/MMBT3906/PZT3906, Rev A
125
8.0
B
Units
C
mA
V
V
V
C
mW/ C
Units
E
mW
C/W
C/W

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2N3906 Summary of contents

Page 1

... Fairchild Semiconductor Corporation MMBT3906 SOT-23 Mark 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A 2N3906 625 5.0 83.3 200 PZT3906 SOT-223 Value Units 5.0 V 200 mA -55 to +150 C Max Units *MMBT3906 **PZT3906 350 1,000 mW 2.8 8.0 mW/ C C/W 357 125 C 2N3906/MMBT3906/PZT3906, Rev A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS h DC Current Gain * FE V ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 250 125 °C 200 150 25 °C 100 - 40 °C 50 0.1 0.2 0 COLLECTOR CURRE NT (mA) C Base-Emitter Saturation Voltage vs Collector ...

Page 4

Typical Characteristics Noise Figure vs Frequency 100 1.0 mA 100 0 FREQUENCY (kHz) Switching Times ...

Page 5

Typical Characteristics Voltage Feedback Ratio 100 COLLECTOR CURRENT (mA) C Output Admittance 1000 100 10 0 COLLECTOR CURRENT (mA) C PNP General Purpose Amplifier (continued 0.1 0 ...

Page 6

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ 2 ...

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