P0115DA STMicroelectronics, P0115DA Datasheet - Page 3

• Manufacturer Part Number: P0115DA
• Description: THYRISTOR, 0.8A, 400V, TO-92
• Manufacturer: STMicroelectronics

Specifications of P0115DA

• Peak Repetitive Off-state Voltage, Vdrm: 400V
• Gate Trigger Current Max, Igt: 50µA
• Current It Av: 0.5A
• On State Rms Current It(rms): 0.8A
• Peak Non Rep Surge Current Itsm 50hz: 7A
• Holding Current Max: RoHS Compliant

Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
0.8
0.6
0.4
0.2
Fig.3 : Average on-state current versus lead tem-
perature.
0.8
0.6
0.4
0.2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
1
0
1
0
P (W)
0
0
I
-40
T(AV)
Igt[Tj]
Igt[Tj=25 C]
Ih
10 20 30 40 50 60 70 80 90 100 110 120 130
0.1
-20
360
= 180
(A)
DC
Igt
O
o
o
Tj( C)
0.2
0
o
Ih[Tj]
Ih[Tj=25 C]
20
0.3
= 30
Tlead ( C)
40
o
o
0.4
= 60
o
60
o
0.5
= 90
80
= 120
o
0.6
100
o
= 180
I
T(AV)
DC
0.7
120 140
o
(A)
0.8
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tlead).
0.8
0.6
0.4
0.2
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
8
7
6
5
4
3
2
1
0
1.00
0.10
0.01
1
1
0
P (W)
0
I
TSM
1E-3
Zth(j-a)/Rth(j-a)
Number of cycles
(A)
20
Rth(j-a )
1E-2
Tamb ( C)
40
10
o
1E-1
60
Rth(j-l)
1 E+0
80
100
100
Tj initial = 25 C
1 E+1
P01xxxA/B
120
Tlead ( C)
1E +2 5 E+2
o
tp (s)
140
1,000
o
-45
-65
-85
-105
-125
3/5