NTE5570 NTE ELECTRONICS, NTE5570 Datasheet
NTE5570
Manufacturer Part Number
NTE5570
Description
SILICON CONTROLLED RECTIFIER,200V V(DRM),125A I(T),TO-209AC
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5570.pdf
(2 pages)
Specifications of NTE5570
Rohs Compliant
YES
Electrical Characteristics: (Maximum values @ T
Repetitive Peak Voltages, V
Non−Repetitive Peak Reverse Blocking Voltage, V
Average On−State Current (Half Sine Wave, 180°, T
RMS On−State Current (DC @ T
Peak One−Cycle, Non−Repetitive Surge Current (10ms Duration, Sinusoidal Half Wave), I
Maximum I
Peak Positive Gate Current (5ms Pulse Width), I
Peak Positive Gate Voltage (5ms Pulse Width), +V
Peak Negative Gate Voltage (5ms Pulse Width), −V
Average Gate Power (f = 50Hz, Duty Cycle = 50%), P
Peak Gate Power (50ms Pulse Width), P
Rate of Rise of Off−State Voltage (Exponential to 67% Rated V
Rate of Rise of ON−State Current, di/dt
Typical Delay Time, t
Typical Turn−On Time, t
On−State Voltage (I
Repetitive Peak Off−State Current (At V
Repetitive Peak Reverse Current (At V
Maximum Gate Current Required to Trigger, I
Maximum Gate Voltage Required to Trigger, V
Maximum Holding (Anode Supply 12V Resistive Load, T
Maximum Gate Voltage which will not Trigger any Device, V
NTE5570
NTE5572
NTE5574
NTE5570
NTE5572
NTE5574
No Voltage Reapplied
100% V
No Voltage Reapplied
100% V
(Gate Drive 20V, 65Ω, with t
(Gate Pulse: 10V, 15Ω Source, t
(I
(6V Anode−to−Cathode Applied, T
(6V Anode−to−Cathode Applied, T
TM
Non−Repetitive
2
= 50A, di/dt = −5A/μs min, V
t for Fusing (10ms Duration, Sinusoidal Half Wave), I
RRM
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reapplied
Reapplied
Pk
d
= 250A, 10ms Sine Pulse), V
q
Silicon Controlled Rectifier (SCR)
NTE5570, NTE5572, & NTE5574
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
& V
C
r
= +75°C), I
= 0.5μs, V
RRM
R
125 Amp, TO94
RRM
p
DRM
= 50V, dv/dt = 20V/μs, Gate Bias: 0V 25Ω, t
= 6μs, t
GM
J
J
= +25°C)
= +25°C)
), I
), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GT
RRM
T(RMS)
d
GT
DRM
= Rated V
r
GM
= 0.1μs, V
RSM
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TM
GM
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +125°C unless otherwise specified)
G
= +85°C), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), I
DRM
d
GD
= rated V
, I
DRM
. . . . . . . . . . . . . . . . . . . . . . . . .
TM
2
T(AV)
t
), dv/dt
= 2 x di/dt snubber 0.2μF)
H
DRM
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . . .
, I
TM
= 50A)
p
= 500μs) 110μs
18000A
12700A
. . . . . .
500V/μs
300A/μs
TSM
120mA
150mA
1200V
1300V
1900A
1600A
15mA
15mA
0.25V
200V
600V
500V
900V
125A
12W
1.6V
2.5V
2
2
80A
20V
10V
1μs
sec
sec
3W
3A
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NTE5570 Summary of contents
Page 1
... NTE5570, NTE5572, & NTE5574 Silicon Controlled Rectifier (SCR) Electrical Characteristics: (Maximum values @ T Repetitive Peak Voltages, V NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Operating Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction−to−Case (DC Operation), R Thermal Resistance, Case−to−Heat Sink, R (Mounting Surface Smooth, Flat, and Greased) 7.500 (190.5) Max (Terminals 1 & 2) 1.031 (26.18) Seating Plane . . . . ...