NTE5498 NTE ELECTRONICS, NTE5498 Datasheet
NTE5498
Manufacturer Part Number
NTE5498
Description
SILICON CONTROLLED RECTIFIER,400V V(DRM),7.6A I(T),TO-220AB
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5498.pdf
(2 pages)
Description:
The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated
PNPN devices in a TO220 type package designed for general purpose high current applications
where moderate gate sensitivity is required.
Absolute Maximum Ratings: (T
Peak Repetitive Off−State Voltage (T
RMS On−State Current (All Conduction Angles, T
Average On−State Current (Half Cycle, 180° Conduction Angle, T
Non−Repetitive On−State Current (Half Cycle, 60Hz), I
Non−Repetitive On−State Current (Half Cycle, 50Hz), I
Circuit Fusing Considerations (Half Cycle, t = 10ms), I
Peak Gate Current (10μs Max), I
Peak Gate Dissipation (10μs Max), P
Average Gate Dissipation (20ms Max), P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient, R
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
Electrical Characteristics: (T
Off−State Leakage Current
On−State Voltage
On−State Threshold Voltage
On−State Slope Resistance
Gate−Trigger Current
Gate−Trigger Voltage
NTE5498
NTE5499
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
Symbol
V
I
I
DRM
V
RRM
T(TO)
I
V
r
GT
stg
A
GT
T
T
GM
= +25°C unless otherwise specified)
,
A
NTE5498 & NTE5499
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
J
V
I
T
T
V
V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
J
J
12 Amp, TO220
DRM
D
D
= −40° to +125°C, R
= 24A, T
= +125°C
= +125°C
= 7V
= 7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
J
thJC
+ V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
RRM
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
= +25°C
, R
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +85°C), I
GK
2
= 1kΩ
TSM
TSM
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1kΩ), V
T(RMS)
T
T
J
J
= +125°C
= +25°C
C
= +85°C), I
. . . . . . . . . . . . . . . . . . . . .
L
DRM
. . . . . . . . . . . . . . .
, V
Min Typ Max
−
−
−
−
−
5
−
RRM
T(AV)
−
−
−
−
−
−
−
−40° to +125°C
−40° to +125°C
. . . . . . . .
1.5
5.0
1.8
1.0
2.0
36
10
+250°C
60K/W
72A
3K/W
Unit
400V
800V
132A
120A
mΩ
mA
mA
7.6A
10W
μA
12A
V
V
V
1W
4A
2
s
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NTE5498 Summary of contents
Page 1
... Silicon Controlled Rectifier (SCR) Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (T Peak Repetitive Off−State Voltage (T NTE5498 ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Holding Current Latching Current Critical Rate of Voltage Rise Critical Rate of Current Rise Gate Controlled Delay Time Commutated Turn−Off Time .147 (3.75) Dia Max .070 (1.78) Max = +25°C unless otherwise specified) A Symbol ...