NTE5444 NTE ELECTRONICS, NTE5444 Datasheet - Page 2

• Manufacturer Part Number: NTE5444
• Description: SILICON CONTROLLED RECTIFIER,200V V(DRM),8A I(T),TO-127
• Manufacturer: NTE ELECTRONICS

Electrical Characteristics: (T
Peak Forward or Reverse
Gate Trigger Current
Gate Trigger Voltage
Peak On−State Voltage
Holding Current
Gate Controlled Turn−On Time
Circuit Commutated Turn−Off
Critical Rate−of−Rise of
Blocking Current
(Continuous DC)
(Continuous DC)
Time
Off−State Voltage
Parameter
Heat Sink Contact
Area (Bottom)
(17.0)
Symbol
.166 (4.23)
.668
Max
I
dv/dt
I
I
DRM
V
V
RRM
C
I
Hold
t
GT
t
TM
GT
gt
q
= +25°C unless otherwise specified)
,
Rated V
Gate Open
V
V
V
Pulse Width = 1ms to 2 ms,
Duty Cycle ≤ 2%
V
I
I
V
T
TM
TM
J
D
D
D
D
D
= +100°C, Gate Open
= 7V, R
= 7V, R
= Rated V
= 7V, Gate Open
= Rated V
= 5A, I
= 5A, I
K
.530 (13.4) Max
DRM
GT
R
L
L
= 5A
= 100Ω
= 100Ω
or V
DRM
DRM
= 20mA, V
Test Conditions
.150 (3.82) Max
RRM
, R
, Exponential Waveform,
L
,
G
= 100Ω, T
D
= Rated V
A (Heat Sink Area)
T
T
T
T
T
T
I
I
T
T
T
TM
TM
J
J
C
C
C
C
C
C
J
= +100°C
= +100°C
J
= +25°C
(16.6)
= +25°C
= −40°C
= +25°C
= −40°C
= +25°C
= −40°C
.143 (3.65) Dia Thru
= 5A
= 15.7A
.655
Max
= +100°C
DRM
peak
peak
Min
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.75
Typ
1.0
15
20
50
−
−
7
−
−
−
−
6
−
1
Max
1.5
2.5
1.5
2.0
10
30
60
40
70
2
−
−
−
−
−
V/μs
Unit
mA
mA
mA
mA
mA
μA
μs
μs
μs
V
V
V
V
V