BT152-500RT NXP Semiconductors, BT152-500RT Datasheet - Page 3

• Manufacturer Part Number: BT152-500RT
• Description: THYRISTOR,20A,500V,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BT152-500RT

• Peak Repetitive Off-state Voltage, Vdrm: 500V
• Gate Trigger Current Max, Igt: 3mA
• Current It Av: 13A
• On State Rms Current It(rms): 20A
• Peak Non Rep Surge Current Itsm 50hz: 220A
• Holding Current Max Ih: 60mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT152-500RT_1
Product data sheet
Symbol
I
I
P
V
TSM
2
Fig 1.
Fig 3.
G(AV)
RGM
t
I
T(RMS)
(A)
(W)
P
tot
25
20
15
10
30
25
20
15
10
5
0
5
0
base temperature; maximum values
RMS on-state current as a function of mounting
Total power dissipation as a function of average on-state current; maximum values
50
0
Limiting values
Parameter
non-repetitive peak
on-state current
I
average gate power
peak reverse gate
voltage
2
t for fusing
0
2
50
Conditions
half sine wave; t
half sine wave; t
see
t
over any 20 ms period
p
100
4
= 10 ms; sine-wave pulse
Figure
T
003aad224
mb
( C)
4
4; see
150
Rev. 01 — 12 May 2009
p
p
6
= 8.3 ms; T
= 10 ms; T
Figure 5
2.8
Fig 2.
I
T(RMS)
j(init)
(A)
j(init)
8
50
45
40
35
30
25
20
15
10
= 25 °C;
= 25 °C
5
0
10
duration; maximum values
RMS on-state current as a function of surge
2
2.2
conduction
(degrees)
angle
120
180
10
30
60
90
10
SCR, 20 A, 32 mA, 500 V, SOT78
1.9
1
factor
form
1.57
2.8
2.2
1.9
BT152-500RT
a
4
12
a = 1.57
Min
-
-
-
-
-
surge duration (s)
1
I
T(AV)
© NXP B.V. 2009. All rights reserved.
003aad220
003aad223
Max
220
200
1
5
200
(A)
10
14
117
128
139
150
T
mb(max)
Unit
A
A
A
W
V
( C)
2
3 of 11
s