BUK661R6-30C NXP Semiconductors, BUK661R6-30C Datasheet - Page 10

• Manufacturer Part Number: BUK661R6-30C
• Description: MOSFET,N CH,30V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK661R6-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1400µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-404
• Rohs Compliant: Yes

NXP Semiconductors
BUK661R6-30C
Product data sheet
Fig 16. Drain-source on-state resistance as a function of drain current; typical values
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R
(mΩ)
DSon
Rev. 01 — 6 September 2010
10
8
6
4
2
0
0
V
50
GS
(V) = 4 V
N-channel TrenchMOS intermediate level FET
100
150
003aae010
I
D
BUK661R6-30C
(A)
4.5
10
5
200
© NXP B.V. 2010. All rights reserved.
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