BUK655R0-75C NXP Semiconductors, BUK655R0-75C Datasheet - Page 7

• Manufacturer Part Number: BUK655R0-75C
• Description: MOSFET,N CH,75V,98A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK655R0-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 4.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK655R0-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
R
(mΩ)
g
fs
DSon
250
200
150
100
50
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
40
5
…continued
80
10
120
15
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V
003aae430
003aae758
I
D
GS
(A)
(V)
Conditions
I
see
I
V
S
S
GS
Rev. 02 — 14 October 2010
160
20
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
= 25 V
Fig 6.
Fig 8.
(A)
(A)
I
I
D
D
200
150
100
200
160
120
j
50
80
40
= 25 °C;
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
V
GS
(V) = 10.0
0.5
T
j
= 175 °C
2
BUK655R0-75C
Min
-
-
-
N-channel TrenchMOS FET
6.0
1
5.0
T
4
j
Typ
0.85
62
153
= 25 °C
1.5
© NXP B.V. 2010. All rights reserved.
V
GS
003aae756
003aae759
V
DS
4.5
(V)
Max
1.2
-
-
4.0
3.8
(V)
3.6
3.4
2
6
Unit
V
ns
nC
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