IRFG9110 International Rectifier, IRFG9110 Datasheet

P CHANNEL MOSFET, -100V, MO-036AB

IRFG9110

Manufacturer Part Number
IRFG9110
Description
P CHANNEL MOSFET, -100V, MO-036AB
Manufacturer
International Rectifier
Datasheet

Specifications of IRFG9110

Module Configuration
Quad
Transistor Polarity
P Channel
Continuous Drain Current Id
-750mA
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
1.4ohm
Rds(on) Test Voltage Vgs
-10V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
For footnotes refer to the last page
Absolute Maximum Ratings
HEXFET
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
I D @ V GS = -10V, T C = 100°C Continuous Drain Current
I D @ V GS = -10V, T C = 25°C
www.irf.com
Part Number R
IRFG9110
P D @ T C = 25°C
®
transistor’s totally isolated package eliminates the
T STG
MOSFET technology is the key to International
dv/dt
V GS
E AS
E AR
I DM
I AR
T J
1.4
DS(on)
-0.75A
I
D
Parameter
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
HEXFET
tran-
REF:MIL-PRF-19500/599
HEXFET
300 ( 0.063 in.(1.6mm) from case for 10s)
100V, QUAD P-CHANNEL
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
®
MOSFET TECHNOLOGY
JANTXV2N7335
1.3 (typical)
-55 to 150
0.011
JANTX2N7335
-0.75
-0.5
-3.0
-5.5
±20
1.4
MO-036AB
75
IRFG9110
PD - 90397G
Units
W/°C
V/ns
mJ
mJ
o
A
W
V
A
C
g
04/16/02
1

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IRFG9110 Summary of contents

Page 1

... HEXFET MOSFET TECHNOLOGY HEXFET tran- Features: n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Dynamic dv/dt Rating n Light-weight 300 ( 0.063 in.(1.6mm) from case for 10s 90397G IRFG9110 JANTX2N7335 JANTXV2N7335 MO-036AB Units -0.75 A -0.5 -3.0 1.4 W 0.011 W/°C ± — A — ...

Page 2

... IRFG9110 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse Q g Total Gate Charge ...

Page 3

... Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFG9110 3 ...

Page 4

... IRFG9110 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com 13a & b ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com IRFG9110 D.U. -10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit d(on) r d(off 10% 90 Fig 10b. Switching Time Waveforms - ...

Page 6

... IRFG9110 -10V -20V 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 15V Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit Vs. Drain Current Current Regulator Same Type as D.U.T. ...

Page 7

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com I SD -0.75A, di/dt 75A -100V 150°C Pulse width 300 s; Duty Cycle Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02 IRFG9110 2% TAC Fax: (310) 252-7903 7 ...

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