SI5513DC-T1-E3 Vishay, SI5513DC-T1-E3 Datasheet

DUAL N/P CHANNEL MOSFET, 20V, 1206

SI5513DC-T1-E3

Manufacturer Part Number
SI5513DC-T1-E3
Description
DUAL N/P CHANNEL MOSFET, 20V, 1206
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5513DC-T1-E3

Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
4.2A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
4.5V
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 3.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.1A, 2.1A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.075 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.1 A @ N Channel or 2.1 A @ P Channel
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI5513DC-T1-E3TR

Available stocks

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Price
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SI5513DC-T1-E3
Manufacturer:
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Quantity:
38 645
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SI5513DC-T1-E3
Manufacturer:
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2 405
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Part Number:
SI5513DC-T1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SI5513DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71186
S10-0547-Rev. G, 08-Mar-10
Ordering Information: Si5513DC-T1-E3 (Lead (Pb)-free)
N-Channel
P-Channel
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
D
1
1206-8 ChipFET
D
1
V
Bottom View
DS
- 20
D
20
S
2
1
(V)
D
G
Si5513DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
2
1
0.155 at V
0.260 at V
0.075 at V
0.134 at V
S
2
1
®
G
R
2
DS(on)
J
a
= 150 °C)
a
Complementary 20 V (D-S) MOSFET
GS
GS
GS
GS
Marking Code
= - 4.5 V
= - 2.5 V
(Ω)
= 4.5 V
= 2.5 V
EB XX
a
Part # Code
Lot Traceability
and Date Code
I
D
- 2.9
- 2.2
Steady State
Steady State
4.2
3.1
a
T
T
T
T
(A)
A
A
A
A
b, c
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
A
= 25 °C, unless otherwise noted
Q
g
(Typ.)
4
3
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
I
thJA
thJF
I
DS
GS
D
S
D
stg
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Definition
G
5 s
4.2
3.0
1.8
2.1
1.1
1
N-Channel MOSFET
N-Channel
Typical
50
90
30
20
10
Steady State
®
D
S
Power MOSFETs
1
1
3.1
2.2
0.9
1.1
0.6
- 55 to 150
± 12
260
- 2.9
- 2.1
- 1.8
5 s
2.1
1.1
G
P-Channel
Maximum
2
Vishay Siliconix
P-Channel MOSFET
110
- 20
- 10
60
40
Steady State
Si5513DC
- 2.1
- 1.5
- 0.9
1.1
0.6
D
S
www.vishay.com
2
2
°C/W
Unit
Unit
°C
W
V
A
1

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SI5513DC-T1-E3 Summary of contents

Page 1

... Marking Code Bottom View Ordering Information: Si5513DC-T1-E3 (Lead (Pb)-free) Si5513DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5513DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 71186 S10-0547-Rev. G, 08-Mar- thru 1.5 V 2.0 2 Si5513DC Vishay Siliconix ° ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 600 500 C iss 400 300 C oss 200 100 ...

Page 4

... Si5513DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... Drain Current (A) D On-Resistance vs. Drain Current Document Number: 71186 S10-0547-Rev. G, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 3 2 1.5 V 2.0 2.5 3 Si5513DC Vishay Siliconix - ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 6

... Si5513DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 0.0 0.5 1.0 1 Total Gate Charge (nC) g Gate Charge 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 I 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71186. Document Number: 71186 S10-0547-Rev. G, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5513DC Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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