SKM400GB12E4 SEMIKRON, SKM400GB12E4 Datasheet - Page 2

• Manufacturer Part Number: SKM400GB12E4
• Description: IGBT HALFBRIDGE MODULE 400A 1200V
• Manufacturer: SEMIKRON

Specifications of SKM400GB12E4

• Module Configuration: Dual
• Dc Collector Current: 400A
• Collector Emitter Voltage Vces: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: SEMITRANS 3
• No. Of Pins: 7
• Svhc: No
• Family/system: SEMITRANS
• Voltage (v): 1200
• Current (a): 400
• Chip-type: IGBT 4 (Trench)
• Case: SEMITRANS 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SKM400GB12E4
IGBT4 Modules
SKM400GB12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• V
• High short circuit capability, self limiting
• Soft switching 4. Generation CAL diode
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at f
Remarks
• Case temperature limited to
2
SEMITRANS
T
T
rel. results valid for T
coefficient
to 6 x I
(CAL4)
c
op
CEsat
= 125°C max, recomm.
= -40 ... +150°C, product
with positive temperature
CNOM
GB
j
= 150°
®
sw
3
up to 20 kHz
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
R
M
M
w
RRM
F
CE
F
F0
rr
th(j-c)
CC'+EE'
th(c-s)
rr
s
t
= V
EC
Rev. 3 – 29.10.2010
I
V
chip
I
di/dt
V
V
terminal-chip
Conditions
per diode
per module
to heat sink M6
F
F
GE
GE
CC
= 400 A
= 400 A
= 0 V
off
= ±15 V
= 600 V
= 8800 A/µs
T
T
T
T
T
T
T
T
T
T
T
to terminals M6
j
j
j
j
j
j
j
j
j
C
C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 125 °C
min.
2.5
3
typ.
2.20
2.15
30.5
0.25
0.02
450
1.3
0.9
2.3
3.1
0.5
68
15
© by SEMIKRON
0.038
max.
2.52
2.47
0.14
325
1.5
1.1
2.5
3.4
20
5
5
Unit
K/W
K/W
m
m
m
m
Nm
Nm
Nm
µC
mJ
nH
V
V
V
V
A
g