7MBR75U2B-060-50 FUJI ELECTRIC, 7MBR75U2B-060-50 Datasheet - Page 3

• Manufacturer Part Number: 7MBR75U2B-060-50
• Description: IGBT, 7 PACK MOD, 600V, 75A, M712
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR75U2B-060-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.15V
• Power Dissipation Max: 255W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT Module
Characteristics (Representative)
10.00
175
150
125
100
175
150
125
100
1.00
0.10
0.01
75
50
25
75
50
25
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
1
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f= 1MHz, Tj= 25°C
1
10
VGE=15V / chip
VGE=20V 15V 12V
Tj= 25°C / chip
2
[ Inverter ]
[ Inverter ]
[ Inverter ]
Coes
Cres
2
Tj=25°C
3
20
Cies
3
Tj=125°C
4
10V
8V
30
5
4
500
400
300
200
100
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
175
150
125
100
10
0
75
50
25
8
6
4
2
0
0
5
0
0
50
Vcc=300V, Ic=75A, Tj= 25°C
Dynamic Gate charge (typ.)
Collector-Emitter voltage : VCE [ V ]
1
Gate-Emitter voltage : VGE [ V ]
Gate charge : Qg [ nC ]
10
100
Tj= 125°C / chip
Tj=25°C / chip
VGE
[ Inverter ]
150
VCE
2
[ Inverter ]
[ Inverter ]
15
VGE=20V 15V
200
7MBR75U2B060
3
250
20
Ic=150A
Ic=75A
Ic=37.5A
300
4
12V
10V
8V
25
20
15
10
5
0
25
5