7MBR75SB-060-50 FUJI ELECTRIC, 7MBR75SB-060-50 Datasheet - Page 4

• Manufacturer Part Number: 7MBR75SB-060-50
• Description: IGBT, 7 PACK MOD, 600V, 75A, M712
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR75SB-060-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 300W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT Modules
1000
5000
1000
100
100
10
10
15
10
5
0
10
10
0
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Vcc=300V, V
Vcc=300V, Ic=75A, V
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=75A, V
Gate resistance : Rg [
Gate resistance : Rg [
50
Collector current : Ic [ A ]
GE
=±15V, Rg=33 , Tj=25°C
[ Inverter ]
[ Inverter ]
[ Inverter ]
GE
GE
=±15V, Tj=25°C
=±15V, Tj=125°C
100
100
100
]
]
ton
toff
tr
tf
Eoff
Eon
Err
tr
ton
toff
tf
150
300
300
1000
100
200
150
100
10
50
8
6
4
2
0
0
0
0
0
+V
Switching loss vs. Collector current (typ.)
Vcc=300V, V
Switching time vs. Collector current (typ.)
GE
Reverse bias safe operating area
=15V, -V
200
Vcc=300V, V
Collector - Emitter voltage : VCE [ V ]
50
Collector current : Ic [ A ]
50
Collector current : Ic [ A ]
GE
GE
[ Inverter ]
=±15V, Rg=33 , Tj=125°C
=
<15V, Rg>33 , Tj<125°C
[ Inverter ]
[ Inverter ]
GE
=±15V, Rg=33
400
=
7MBR75SB060
100
100
=
600
Eon(125
Eoff(125
Err(125
Eon(25
Eoff(25
Err(25
toff
tf
ton
tr
o
o
C)
o
o
C)
C)
C)
o
o
C)
C)
150
150
800