7MBR35UA-120-50 FUJI ELECTRIC, 7MBR35UA-120-50 Datasheet

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7MBR35UA-120-50

Manufacturer Part Number
7MBR35UA-120-50
Description
IGBT, 7 PACK MOD, 1200V, 35A, M711
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 7MBR35UA-120-50

Module Configuration
Seven
Transistor Polarity
N Channel
Dc Collector Current
35A
Collector Emitter Voltage Vces
2.4V
Power Dissipation Max
160W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
7MBR35UA120
IGBT MODULE (U series)
1200V / 35A / PIM
· Low V
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Item
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage
Mounting screw torque
Absolute maximum ratings (Tc=25°C unless otherwise specified)
connected together and shorted to base plate when isolation test will be done.
Features
Applications
Maximum ratings and characteristics
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I
2
t
CE
(sat)
between thermistor and others *3
(Non-Repetitive)
V
V
I
I
-I
-I
P
V
V
I
I
P
V
V
I
I
I
T
T
V
Symbol
O
C
CP
C
CP
FSM
2
t
stg
C
C
C
C
j
CES
GES
CES
GES
iso
RRM
RRM
pulse
Condition
Continuous
1ms
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Rating
-40 to +125
AC 2500
AC 2500
1200
1200
1200
1600
+150
115
±20
160
±20
260
338
35
25
70
50
35
70
25
15
50
30
35
3.5 *
1
IGBT Modules
Unit
V
V
A
W
V
V
A
W
V
V
A
A
A
°C
°C
V
N·m
2
s

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7MBR35UA-120-50 Summary of contents

Page 1

... IGBT MODULE (U series) 1200V / 35A / PIM Features · Low V (sat) CE · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25° ...

Page 2

... Symbol Condition Inverter IGBT Inverter FWD Rth(j-c) Brake IGBT Converter Diode With thermal compound Rth(c-f) [Brake] [Inverter] 22(P1) 20(Gu) 18(Gv) 19(Eu) 17(Ev) 7(B) 4(U) 14(Gb) 13(Gx) 12(Gy) 24(N1) 7MBR35UA120 Characteristics Min. Typ. Max 1 200 4.5 6.5 8.5 - 2.25 2. 1.95 2. ...

Page 3

... Collector-Emitter voltage vs. Gate-Emitter voltage (typ Tj=125° Cies Cres 7MBR35UA120 [ Inverter ] Tj= 125°C / chip VGE=20V 15V 12V 10V Collector-Emitter voltage : VCE [V] [ Inverter ] Tj=25°C / chip Ic=50A Ic=25A Ic= 12. Gate - Emitter voltage : VGE [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=35A, Tj= 25°C ...

Page 4

... Inverter ] ton toff 10 tf 100.0 1000.0 [ Inverter ] 80 Eon 60 40 Eoff 20 Err 0 100.0 1000.0 7MBR35UA120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=43 , Tj=125° Collector current : Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= Collector current : Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE < ...

Page 5

... Pulse width : sec ] [ Inverter ] chip T j=125° chip T j=25°C T j=125°C 1.0 1.5 2.0 FWD[Inverter] IGBT[Brake] Conv.Diode IGBT[Inverter] 0.100 1.000 7MBR35UA120 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=43 1000 100 Forward current : Thermistor ] Temperature characteristic (typ.) 100 10 1 0.1 -60 ...

Page 6

... Collector-Emitter voltage vs. Gate-Emitter voltage (typ Tj=125° Cies Cres 7MBR35UA120 [ Brake ] Tj= 125°C / chip VGE=20V 15V 12V 10V Collector-Emitter voltage : VCE [V] [ Brake ] Tj=25°C / chip Ic=30A Ic=15A Ic=7. Gate - Emitter voltage : VGE [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25°C ...

Page 7

... IGBT Module Outline Drawings, mm 7MBR35UA120 ...

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