7MBR35SB-120-50 FUJI ELECTRIC, 7MBR35SB-120-50 Datasheet - Page 3

• Manufacturer Part Number: 7MBR35SB-120-50
• Description: IGBT, 7 PACK MOD, 1200V, 35A, M712
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR35SB-120-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 35A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 240W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT Module
Characteristics (Representative)
10000
1000
100
80
60
40
20
80
60
40
20
0
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage
5
Collector current vs. Collector-Emitter voltage
1
1
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
10
VGE=0V, f= 1MHz, Tj= 25°C
VGE=15V (typ.)
Tj= 25°C (typ.)
2
2
15
[ Inverter ]
[ Inverter ]
[ Inverter ]
VGE= 20V
Tj= 25°C
20
3
3
15V
25
12V
Tj= 125°C
4
4
30
Cies
Cres
Coes
10V
8V
35
5
5
1000
800
600
400
200
80
60
40
20
10
0
8
6
4
2
0
0
0
5
0
Collector-Emitter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emitter voltage
1
Collector - Emitter voltage : VCE [ V ]
100
Gate - Emitter voltage : VGE [ V ]
10
Vcc=800V, Ic=35A, Tj= 25°C
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj= 125°C (typ.)
Tj= 25°C (typ.)
2
[ Inverter ]
[ Inverter ]
[ Inverter ]
200
15
3
VGE= 20V
7MBR35SB140
300
20
Ic= 70A
Ic= 35A
Ic= 17.5A
15V
4
12V
10V
8V
400
25
5
25
20
15
10
5
0