2MBI400U2B-060-50 FUJI ELECTRIC, 2MBI400U2B-060-50 Datasheet - Page 11

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2MBI400U2B-060-50

Manufacturer Part Number
2MBI400U2B-060-50
Description
DUAL IGBT MODULE 400A 600V NPT
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 2MBI400U2B-060-50

Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
400A
Collector Emitter Voltage Vces
2.55V
Power Dissipation Max
1.25kW
Collector Emitter Voltage V(br)ceo
600V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2MBI400U2B-060-50
Manufacturer:
FUJI
Quantity:
134
10000
10000
1000
1000
60
50
40
30
20
10
100
100
0
10
10
1.0
1.0
0
Vcc=300V, VGE=±15V, Rg=6.8Ω, Tj= 25℃
Vcc=300V, Ic=400A, VGE=±15V, Tj= 125℃
Vcc=300V, Ic=400A, VGE=±15V, Tj= 25℃
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
ton
Gate resistance : Rg [ Ω ]
toff
toff
ton
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
200
10.0
10.0
400
600
tr
tf
Eon
Eoff
Err
tr
tf
100.0
100.0
800
10000
1000
1000
800
600
400
200
100
40
30
20
10
10
0
0
+VGE=15V,-VGE≦15V, RG≧6.8Ω ,Tj≦125℃
0
0
0
Vcc=300V, VGE=±15V, Rg=6.8Ω, Tj=125℃
MS5F6562
Switching time vs. Collector current (typ.)
Switching loss vs. Collector current (typ.)
Reverse bias safe operating area (max.)
Vcc=300V, VGE=±15V, Rg=6.8Ω
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
200
200
200
Collector current : Ic [ A ]
400
400
400
600
600
600
Eoff(125℃)
Eon(125℃)
ton
toff
tr
tf
Eoff(25℃)
Eon(25℃)
Err(125℃)
Err(25℃)
11
H04-004-03a
14
800
800
800
a

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