2MBI300UC-120-50 FUJI ELECTRIC, 2MBI300UC-120-50 Datasheet

2MBI300UC-120-50

Manufacturer Part Number

2MBI300UC-120-50

Description

IGBT, 2 PACK MOD, 1200V, 300A, M235

Manufacturer

FUJI ELECTRIC

Datasheet

1.2MBI300UC-120-50.pdf (6 pages)

Specifications of 2MBI300UC-120-50

Module Configuration

Dual

Transistor Polarity

N Channel

Dc Collector Current

300A

Collector Emitter Voltage Vces

2.1V

Power Dissipation Max

1.47kW

Collector Emitter Voltage V(br)ceo

1.2kV

Transistor Case Style

Module

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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2MBI300UC-120

IGBT MODULE (U series)

1200V / 300A / 2 in one package

Note *1: All terminals should be connected together when isolation test will be done.

Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6)

Note *3: Biggest internal terminal resistance among arm.

Note *4: This is the value which is deﬁned mounting on the additional cooling ﬁn with thermal compound.

Items

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Isolation voltage Between terminal and copper base (*1) V

Screw torque

Items

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip (*3)

Items

Thermal resistance (1device)

Contact thermal resistance

Absolute Maximum Ratings (at Tc=25°C unless otherwise speciﬁed)

Electrical characteristics (at Tj= 25°C unless otherwise speciﬁed)

Thermal resistance characteristics

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter for Motor Drive

AC and DC Servo Drive Ampliﬁer

Uninterruptible Power Supply

Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Symbols

(teminal)

(chip)

Cies

ton

tr (i)

toff

(teminal)

(chip)

trr

R lead

Symbols

Rth(j-c)

Rth(c-f)

CES

GES

GE (th)

CE (sat)

Symbols

Ic pulse

-Ic

-Ic pulse

Tstg

Mounting (*2)

Terminals (*2)

CES

GES

iso

Conditions

IGBT

FWD

with Thermal Compound (*4)

= 300A

= 1.1Ω

= 0V, V

= 20V, I

= 15V

= 0V, V

= 600V

= ±15V

= 0V

= 300mA

Conditions

Continuous

1ms

1 device

AC : 1min.

= 10V, f = 1MHz

= 1200V

= ±20V

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Maximum ratings

min.

4.5

-40 to +125

Characteristics

1200

1470

2500

±20

400

300

800

600

300

600

150

3.5

4.5

0.025

1.90

2.15

1.75

2.00

0.36

0.21

0.03

0.37

0.07

1.75

1.85

1.60

1.70

0.53

typ.

6.5

IGBT Modules

0.085

max.

2.25

2.10

1.20

0.60

1.00

0.30

2.05

1.90

0.35

0.14

400

2.0

8.5

Units

VAC

N·m

°C

Units

°C/W

mΩ

µs

Related parts for 2MBI300UC-120-50

2MBI300UC-120-50 Summary of contents

Page 1

... IGBT MODULE (U series) 1200V / 300A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Ampliﬁer Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25° ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj= 25°C / chip 800 700 VGE=20V 15V 600 500 400 300 200 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) / chip 800 700 Tj=25°C 600 500 400 300 200 100 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25° ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj= 25°C 10000 1000 100 10 0 100 200 300 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=±15V, Tj= 25°C 10000 1000 tr 100 10 0.1 1.0 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=± ...

Page 4

... Forward current vs. Forward on voltage (typ.) chip 800 700 Tj=25°C 600 500 400 300 200 100 Forward on voltage : Transient thermal resistance 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] Tj=125° FWD IGBT 0.100 1.000 4 4 Reverse recovery characteristics (typ.) Vcc=600V, VGE=± ...

Page 5

... Outline Drawings, mm Equivalent Circuit Schematic DEPTH 10.5 min 5 5 IGBT Modules ...

Page 6

... This Catalog contains the product speciﬁcations, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for speciﬁcation changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest speciﬁcations. ...

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