FZ1000R33HL3 Infineon Technologies, FZ1000R33HL3 Datasheet - Page 2

• Manufacturer Part Number: FZ1000R33HL3
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FZ1000R33HL3

• Module Configuration: Single
• Transistor Polarity: N Channel
• Dc Collector Current: 1000A
• Collector Emitter Voltage Vces: 3.3kV
• Power Dissipation Pd: 9.6kW
• No. Of Pins: 7
• Collector Emitter Saturation Voltage Vce(sat): 2.4V
• Channel Type: N
• Configuration: Dual
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Ic (max): 1,000.0 A
• Vce(sat) (typ): 2.4 V
• Technology: IGBT3 Low Loss
• Housing: IHV B 130 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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