FP35R12KT4 Infineon Technologies, FP35R12KT4 Datasheet - Page 4

• Manufacturer Part Number: FP35R12KT4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FP35R12KT4

• Transistor Polarity: N Channel
• Dc Collector Current: 35A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 210W
• No. Of Pins: 23
• Collector Emitter Saturation Voltage Vce(sat): 1.85V
• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Packages: AG-ECONO2-1
• Ic (max): 35.0 A
• Vce(sat) (typ): 1.85 V
• Technology: IGBT4
• Housing: EconoPIM™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Angaben gemäß gültiger Application Note.
Specification according to the valid application note.
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