FP10R06W1E3 Infineon Technologies, FP10R06W1E3 Datasheet
FP10R06W1E3
Manufacturer Part Number
FP10R06W1E3
Description
IGBT Module
Manufacturer
Infineon Technologies
Datasheet
1.FP10R06W1E3.pdf
(12 pages)
Specifications of FP10R06W1E3
Transistor Polarity
N Channel
Dc Collector Current
10A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
68W
No. Of Pins
23
Collector Emitter Saturation Voltage Vce(sat)
1.55V
Channel Type
N
Configuration
Array 7
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Rohs Compliant
Yes
Ic (max)
10.0 A
Vce(sat) (typ)
1.55 V
Technology
IGBT3
Housing
EasyPIM 1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FP10R06W1E3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FP10R06W1E3_B11
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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FP10R06W1E3 Summary of contents
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