BLL6H0514-25 NXP Semiconductors, BLL6H0514-25 Datasheet - Page 3

• Manufacturer Part Number: BLL6H0514-25
• Description: LDMOS,RF,25W,500M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H0514-25

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 2.5A
• Operating Frequency Range: 858MHz To 860MHz
• Rf Transistor Case: SOT-467C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
6. Characteristics
BLL6H0514-25_4
Product data sheet
6.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
f = 1.2 GHz; T
The BLL6H0514-25 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
V
G
RL
η
P
t
t
Dq
DSS
DSX
GSS
r
f
j
fs
D
(BR)DSS
GS(th)
L
DS
droop(pulse)
DS(on)
p
= 25
in
= 50 mA; P
°
C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
DC characteristics
RF characteristics
case
Parameter
output power
drain-source voltage
power gain
input return loss
drain efficiency
pulse droop power
rise time
fall time
L
All information provided in this document is subject to legal disclaimers.
= 25 W; f = 1.2 GHz; t
= 25
°
C; unless otherwise specified, in a class-AB production test circuit.
Rev. 04 — 30 March 2010
p
= 128
μ
s;
p
δ
= 128 μs; δ = 10 %.
Conditions
V
V
V
V
V
V
I
= 10 %; RF performance at V
D
GS
DS
GS
GS
DS
GS
DS
GS
= 63 mA
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
D
DS
D
D
= 630 mA
+ 3.75 V;
DS
+ 3.75 V;
Conditions
P
P
P
P
P
P
P
= 18 mA
= 18 mA
L
L
L
L
L
L
L
= 50 V
= 0 V
= 25 W
= 25 W
= 25 W
= 25 W
= 25 W
= 25 W
= 25 W
BLL6H0514-25
LDMOS driver transistor
Min
110
1.4
-
2.1
-
120
-
DS
Min Typ Max Unit
25
-
20
10
57
-
-
-
DS
= 50 V; I
= 50 V;
© NXP B.V. 2010. All rights reserved.
Typ
-
1.9
-
2.5
-
150
1500 2750 mΩ
-
-
21
15
59
0
20
6
Dq
Max
-
2.4
1
-
100
-
-
50
-
-
-
0.3
50
50
= 50 mA;
3 of 12
W
V
dB
dB
%
dB
ns
ns
Unit
V
V
μA
A
nA
mS