BLF881 NXP Semiconductors, BLF881 Datasheet - Page 7

• Manufacturer Part Number: BLF881
• Description: LDMOS,RF,140W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF881

• Drain Source Voltage Vds: 104V
• Continuous Drain Current Id: 3.7A
• Operating Frequency Range: 858MHz To 860MHz
• Rf Transistor Case: SOT-467C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF881_BLF881S
Product data sheet
Fig 7.
PAR
(dB)
9.0
8.0
7.0
6.0
400
V
common-source broadband test circuit as described in
Section
and drain efficiency as function of frequency;
typical values
DVB-T PAR at 0.01 % probability on the CCDF
DS
= 50 V; I
7.2.1 DVB-T
500
8.
7.2 Broadband RF figures
7.3 Ruggedness in class-AB operation
Dq
= 0.35 A; P
The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
f = 860 MHz at rated power. Ruggedness is measured in the application circuit as
described in
600
700
L(AV)
= 33 W; measured in a
PAR
Section
η
D
800
All information provided in this document is subject to legal disclaimers.
001aal080
f (MHz)
8.
Rev. 3 — 7 December 2010
900
50
40
30
20
(%)
η
D
Fig 8.
(dB)
G
p
25
23
21
19
17
15
400
V
common-source broadband test circuit as described in
Section
DVB-T power gain and shoulder distance as
function of frequency; typical values
DS
= 50 V; I
500
8.
BLF881; BLF881S
Dq
= 0.35 A; P
600
UHF power LDMOS transistor
G
IMD
p
shdr
700
L(AV)
DS
= 33 W; measured in a
= 50 V;
© NXP B.V. 2010. All rights reserved.
800
001aal081
f (MHz)
900
IMD
0
−10
−20
−30
−40
−50
(dBc)
shdr
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