BAV99 /T3 NXP Semiconductors, BAV99 /T3 Datasheet - Page 6

• Manufacturer Part Number: BAV99 /T3
• Description: SWITCHING DIODE, 100V 215mA, SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAV99 /T3

• Diode Type: Small Signal
• Forward Current If(av): 215mA
• Repetitive Reverse Voltage Vrrm Max: 85V
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Test information
BAV99_SER
Product data sheet
Fig 5.
Fig 6.
R
V = V
(1) I
S
R
S
= 50 Ω
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Input signal: forward pulse rise time t
Reverse recovery time test circuit and waveforms
Forward recovery voltage test circuit and waveforms
R
R
= 50
I
+ I
= 1 mA
F
Ω
×
R
S
1 kΩ
8.1 Quality information
D.U.T.
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
450 Ω
I
F
r
D.U.T.
= 0.35 ns
OSCILLOSCOPE
R
i
= 50 Ω
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
r
r
mga881
= 0.6 ns; reverse voltage pulse duration t
= 20 ns; forward current pulse duration t
SAMPLING
R
i
= 50
Rev. 8 — 18 November 2010
Ω
I
V
R
10 %
t
r
t
10 %
r
90 %
input signal
90 %
input signal
t
p
t
p
p
p
≥ 100 ns; duty cycle δ ≤ 0.005
= 100 ns; duty cycle δ = 0.05
t
High-speed switching diodes
t
BAV99 series
V
+ I
F
V FR
output signal
output signal
© NXP B.V. 2010. All rights reserved.
t rr
mga882
(1)
t
6 of 14
t