DG441LDJ-E3 Vishay, DG441LDJ-E3 Datasheet - Page 2

• Manufacturer Part Number: DG441LDJ-E3
• Description: Low Voltage Version/Companion To DG441DJ
• Manufacturer: Vishay

Specifications of DG441LDJ-E3

• No. Of Channels: 4
• On State Resistance Max: 30ohm
• Turn Off Time: 12ns
• Turn On Time: 20ns
• Supply Voltage Range: 2.7V To 12V
• Operating Temperature Range: -40°C To +85°C
• Analog Switch Case Style: DIP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DG441L, DG442L
Vishay Siliconix
Notes:
a. Signals on S
b. All leads welded or soldered to PC board.
c. Derate 7 mW/°C above 75 °C
d. Derate 7.6 mW/°C above 75 °C
e. Derate 12 mW/°C above 75 °C.
www.vishay.com
2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
ABSOLUTE MAXIMUM RATINGS (T
Parameter
V + to V -
GND to V -
Digital Inputs
Continuous Current (any terminal)
Current, S or D (pulsed 1 ms, 10 % duty cycle)
Storage Temperature
Power Dissipation (Packages)
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
On-Resistance Match
Between Channels
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
Input Current, V
Input Current, V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Ground Current
A
e
a
X
, D
V
IN
IN
S
e
X
, V
Low
High
, or IN
e
D
e
e
e
X
e
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
a
(Single Supply 12 V)
b
e
V
R
Symbol
R
ANALOG
C
C
C
X
OIRR
I
I
I
I
DS(on)
t
S(off)
D(off)
D(on)
t
GND
OFF
D(off)
D(on)
DS(on)
TALK
S(off)
I
I
ON
Q
I+
IH
I-
IL
(DQ, DY suffix)
(AK suffix)
16-pin TSSOP
16-pin narrow Body SOIC
16-pin CerDIP
R
Unless Otherwise Specified
V
This document is subject to change without notice.
L
g
= 50 , C
V
= 0 V, R
R
I
V
V
V + = 10.8 V, V - = 0 V
S
D
V
I
A
V + = 12 V, V - = 0 V
L
S
IN
IN
S
V
= 10 mA, V
= 1/11 V, V
V
V
Test Conditions
= 300 , C
= 25 °C, unless otherwise noted)
= 10 mA, V
IN
Under Test = 0.8 V
Under Test = 2.4 V
= 5 V, see figure 2
S
IN
= V
= 2.4 V, 0.8 V
f = 1 MHz
= 0 V or 12 V
e
c
g
L
= 0 , C
D
= 5 pF , f = 1 MHz
= 11/1 V
S
D
L
D
= 11/1 V
= 35 pF
= 2/9 V
= 9 V
L
d
= 10 nF
f
Symbol
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
or 30 mA, whichever occurs first
0.002
0.002
Typ.
0.01
0.03
0.1
20
20
12
71
95
15
5
5
6
-
-
GND - 0.3 to (V +) + 0.3
c
- 55 °C to 125 °C
A Suffix Limits
Min.
- 1.5
- 1.5
- 7.5
- 1.5
- 15
- 15
- 15
- 1
- 1
- 1
- 1
- 65 to 125
- 65 to 150
- 0.3 to 13
0
Limit
d
100
450
650
900
30
7
Max.
0.5
1.5
1.5
1.5
12
30
45
15
15
15
60
80
35
50
1
1
1
S11-1066–Rev. E, 30-May-11
d
Document Number: 71399
- 40 °C to 85 °C
www.vishay.com/doc?91000
D Suffix Limits
Min.
- 10
- 10
- 10
- 1
- 1
- 1
- 1
- 1
- 1
- 5
- 1
0
d
Max.
0.5
12
30
40
10
10
10
60
70
35
45
1
1
1
1
1
1
d
Unit
mW
mA
°C
V
Unit
nA
µA
pC
dB
µA
ns
pF

V