P89LPC9103FTK NXP Semiconductors, P89LPC9103FTK Datasheet - Page 41

• Manufacturer Part Number: P89LPC9103FTK
• Description: MCU 8BIT 80C51 1K FLASH, HVSON-10
• Manufacturer: NXP Semiconductors

Specifications of P89LPC9103FTK

• Controller Family/series: (8051) 8052
• Core Size: 8bit
• No. Of I/o's: 8
• Program Memory Size: 1KB
• Ram Memory Size: 128Byte
• Cpu Speed: 18MHz
• Oscillator Type: Internal Only
• No. Of Timers: 4
• No. Of Pwm: RoHS Compliant

NXP Semiconductors
P89LPC9102_9103_9107_3
Product data sheet
8.26.1 General description
8.26.2 Features
8.26.3 Flash organization
8.26.4 Flash programming and erasing
8.26 Flash program memory
The P89LPC9102/9103/9107 flash memory provides in-circuit electrical erasure and
programming. The flash can be erased, read, and written as bytes. The Sector and Page
Erase functions can erase any flash sector (256 bytes) or page (16 bytes). The Chip
Erase operation will erase the entire program memory. In-Circuit Programming using
standard commercial programmers is available. In addition, In-Application Programming
Lite (IAP-Lite) and byte erase allows code memory to be used for non-volatile data
storage. On-chip erase and write timing generation contribute to a user-friendly
programming interface. The P89LPC9102/9103/9107 flash reliably stores memory
contents even after more than 400000 erase and program cycles. The cell is designed to
optimize the erase and programming mechanisms. The P89LPC9102/9103/9107 uses
V
The P89LPC9102/9103/9107 program memory consists of four 256 byte sectors. Each
sector can be further divided into 16-byte pages. In addition to sector erase, page erase,
and byte erase, a 16-byte page register is included which allows from 1 byte to 16 bytes of
a given page to be programmed at the same time, substantially reducing overall
programming time. In addition, erasing and reprogramming of user-programmable
configuration bytes including UCFG1, the Boot Status Bit, and the Boot Vector is
supported.
Different methods of erasing or programming of the flash are available. The flash may be
programmed or erased in the end-user application (IAP-Lite) under control of the
application’s firmware. Another option is to use the ICP mechanism. This ICP system
provides for programming through a serial clock- serial data interface. Third, the flash may
be programmed or erased using a commercially available EPROM programmer which
supports this device. This device does not provide for direct verification of code memory
contents. Instead this device provides a 32-bit CRC result on either a sector or the entire
1 kB of user code space.
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Programming and erase over the full operating voltage range.
Byte-erase allowing code memory to be used for data storage.
Read/Programming/Erase using ICP.
Any flash program/erase operation in 2 ms.
Programming with industry-standard commercial programmers.
Programmable security for the code in the flash for each sector.
More than 400000 minimum erase/program cycles for each byte.
20-year minimum data retention.
as the supply voltage to perform the Program/Erase algorithms.
Rev. 03 — 10 July 2007
8-bit microcontrollers with two-clock accelerated 80C51 core
P89LPC9102/9103/9107
© NXP B.V. 2007. All rights reserved.
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