AM29F400BT-55EF Spansion Inc., AM29F400BT-55EF Datasheet - Page 41

• Manufacturer Part Number: AM29F400BT-55EF
• Description: IC, FLASH, 4MBIT, 55NS, TSOP-48
• Manufacturer: Spansion Inc.

Specifications of AM29F400BT-55EF

• Memory Type: Flash
• Memory Size: 4Mbit
• Memory Configuration: 512K X 8 / 256K X 16
• Access Time: 55ns
• Supply Voltage Range: 4.75V To 5.25V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 55ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19/18Bit
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 4.75 to 5.25V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8/16Bit
• Number Of Words: 512K/256K
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

REVISION SUMMARY
Revision A (August 1997)
Initial release.
Revision B (October 1997)
Global
Added -55 and -60 speed options, deleted -65 speed
option. Changed data sheet designation from Advance
Information to Preliminary.
Connection Diagrams
Corrected pinouts on all packages: deleted A18.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 µs
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 µs.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 µs after the rising
edge of WE#.
DC Characteristics
Changed to indicate V
to 12.5 V,with a V
to 50 µA. Added I
values to TTL/NMOS table. Revised CMOS typical
standby current (I
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms.
AC Characteristics, Erase/Program Operations
Corrected t
ns.
Erase and Programming Performance
Corrected word and chip programming times.
November 11, 2009 21505E8
AH
specification for -90 speed option to 45
CC
CC3
CC4
test condition of 5.0 V. Revised I
).
ID
specification. Added typical
min and max values are 11.5
D A T A
Am29F400B
LIT
S H E E T
Revision C (January 1998)
Global
Formatted for consistency with other 5.0 volt-only
data sheets.
AC Characteristics
Changed t
Revision C+1 (February 1998)
Table 2, Top Boot Block Sector Address Table
Corrected the sector size for SA10 to 16 Kbytes/
8 Kwords.
DC Characteristics—TTL/NMOS Compatible
Deleted Note 4.
Revision C+2 (April 1998)
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Product Selector Guide, Ordering Information
Added 55 ns ±10% speed option.
AC Characteristics
Word/Byte Configuration: Changed t
for 55 ns device.
Erase/Program Operations: Changed t
mode specification to 12 µs. Corrected the notes refer-
ence for t
100% tested. Corrected the note reference for t
This parameter is not 100% tested.
Changed t
Alternate CE# Controlled Erase/Program Operations:
Changed t
Corrected the notes reference for t
These parameters are 100% tested.
Changed t
Temporary Sector Unprotect Table
Added note reference for t
100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision C+3 (June 1998)
Distinctive Characteristics
High Performance: Changed “Access times as fast as
55 ns” to “Access times as fast as 45 ns”.
WHWH1
DF
DS
DS
WHWH1
and T
and t
and t
and t
CP
CP
word mode specification to 12 µs.
FLQZ
specifications for 55 ns device.
specifications for 55 ns device.
WHWH2
to 15 ns for -55 speed option.
VIDR
. These parameters are
. This parameter is not
WHWH1
FHQV
WHWH1
and t
specification
WHWH2
word
VCS
39
.
.