AM29F010B-70JF Spansion Inc., AM29F010B-70JF Datasheet - Page 28

• Manufacturer Part Number: AM29F010B-70JF
• Description: IC, FLASH, 1MBIT, 70NS, LCC-32
• Manufacturer: Spansion Inc.

Specifications of AM29F010B-70JF

• Memory Type: Flash
• Memory Size: 1Mbit
• Memory Configuration: 128K X 8
• Access Time: 70ns
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: PLCC
• No. Of Pins: 32
• Cell Type: NOR
• Density: 1Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 17b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: -40C to 85C
• Package Type: PLCC
• Program/erase Volt (typ): 4.5 to 5.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 128K
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 32
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AC CHARACTERISTICS
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4
6. The device has a minimum guaranteed erase cycle endurance of 1 million cycles.
26
Notes:
1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, D
2. Figure indicates the last two bus cycles of the command sequence.
Chip/Sector Erase Time
Byte Programming Time
Chip Programming Time (Note 3)
programming typicals assume checkerboard pattern.
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
for further information on command definitions.
Addresses
Parameter
WE#
Data
OE#
CE#
Figure 13. Alternate CE# Controlled Write Operation Timings
555 for program
2AA for erase
t
t
t
WS
WH
WC
Typ (Note 1)
A0 for program
55 for erase
CC
t
GHEL
t
t
t
DS
PA for program
SA for sector erase
555 for chip erase
CP
CPH
= 4.5 V (4.75 V for -45), 100,000 cycles.
t
1.0
0.9
AS
t
7
DH
D A T A
t
AH
PD for program
30 for sector erase
10 for chip erase
Limits
Max (Note 2)
S H E E T
t
6.25
300
WHWH1 or 2
15
°
Data# Polling
C, 5.0 V V
Unit
sec
sec
µs
CC
, 1 million cycles. Additionally,
DQ7#
Am29F010B_00_C10 November 12, 2009
PA
Excludes 00h programming prior to
erasure (Note 4)
Excludes system-level overhead
(Note 5)
D
OUT
Comments
OUT
= Array Data.