LF412CN National Semiconductor, LF412CN Datasheet - Page 4

• Manufacturer Part Number: LF412CN
• Description: IC, OP-AMP, 4MHZ, 15V/µs, DIP-8
• Manufacturer: National Semiconductor

Specifications of LF412CN

• Op Amp Type: Low Offset Voltage
• No. Of Amplifiers: 2
• Bandwidth: 4MHz
• Slew Rate: 15V/µs
• Supply Voltage Range: 10V To 36V
• Amplifier Case Style: DIP
• No. Of Pins: 8
• Dc: 0348
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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THD
e
i
n
Symbol
n
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: Any of the amplifier outputs can be shorted to ground indefintely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 5: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θ
Note 6: These devices are available in both the commercial temperature range 0°C
temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an
“M” indicates the military temperature range. The military temperature range is available in “H” package only. In all cases the maximum operating temperature is
limited by internal junction temperature T
Note 7: Unless otherwise specified, the specifications apply over the full temperature range and for V
V
Note 8: The LF412A is 100% tested to this specification. The LF412 is sample tested on a per amplifier basis to insure at least 85% of the amplifiers meet this
specification.
Note 9: The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature, T
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
recommended if input bias current is to be kept to a minimum.
Note 10: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice.
V
Note 11: Refer to RETS412X for LF412MH and LF412MJ military specifications.
Note 12: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate
outside guaranteed limits.
Note 13: Human body model, 1.5 kΩ in series with 100 pF.
Typical Performance Characteristics
OS
S
= ±6V to ±15V.
, I
B
, and I
Total Harmonic Dist
Equivalent Input Noise
Voltage
Equivalent Input Noise
Current
OS
are measured at V
Parameter
Input Bias Current
CM
=0.
j
max.
A
V
BW=20 Hz-20 kHz
T
f=1 kHz
T
A
A
V
O
=25°C, R
=25°C, f=1 kHz
=+10, R
=20 Vp-p,
D
. T
Conditions
j
=T
565610
L
A
=10k,
S
+θ
=100Ω,
jA
P
D
where θ
jA
4
is the thermal resistance from junction to ambient. Use of a heat sink is
≤
T
Min
A
≤
70°C and the military temperature range −55°C
LF412A
≤
0.01
Typ
0.02
25
S
=±20V for the LF412A and for V
Input Bias Current
Max
jA
.
Min
LF412
≤
0.01
Typ
0.02
25
S
=±15V for the LF412.
≤
Max
T
565611
A
≤
125°C. The
j
. Due to limited
Units
%