NTD65N03R-35G ON Semiconductor, NTD65N03R-35G Datasheet - Page 7

• Manufacturer Part Number: NTD65N03R-35G
• Description: MOSFET Small Signal 25V 65A N-Channel
• Manufacturer: ON Semiconductor

Specifications of NTD65N03R-35G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0097 Ohms
• Forward Transconductance Gfs (max / Min): 27 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: IPAK-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SEATING
PLANE
SEATING PLANE
−T−
V
S
F
1
G
B
R
4
2
V
3
W
F
A
K
D
0.13 (0.005)
G
3 PL
B
R
J
M
T
C
A
K
PACKAGE DIMENSIONS
D
3 IPAK, STRAIGHT LEAD
3 PL
E
H
0.13 (0.005) W
http://onsemi.com
CASE 369AC−01
CASE 369D−01
NTD65N03R
J
ISSUE O
ISSUE B
H
DPAK
7
C
E
Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
ANSI Y14.5M, 1982.
STYLE 2:
DIM
NOTES:
PIN 1. GATE
A
B
C
D
G
H
K
R
E
F
J
S
V
Z
1.. DIMENSIONING AND TOLERANCING
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
4. DIMENSION A DOES NOT INCLUDE
PER ANSI Y14.5M, 1982.
DAMBAR POSITION.
DAMBAR POSITION OR MOLD GATE.
2. DRAIN
3. SOURCE
4. DRAIN
DIM
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.350
0.180
0.025
0.035
0.155
W
A
B
C
D
E
F
G
H
K
R
V
J
MIN
0.090 BSC
INCHES
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.134
0.180
0.035
0.000
MIN
0.090 BSC
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.380
0.215
0.040
0.050
INCHES
MAX
−−−
0.245
0.265
0.094
0.035
0.023
0.043
0.040
0.023
0.142
0.215
0.050
0.010
MAX
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
8.89
4.45
0.63
0.89
3.93
MIN
2.29 BSC
0.000
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
3.40
4.57
0.89
MIN
2.29 BSC
MAX
6.35
6.73
2.38
0.88
0.58
1.14
1.01
0.58
9.65
5.45
1.01
1.27
−−−
MAX
6.22
6.73
2.38
0.88
0.58
1.09
1.01
0.58
3.60
5.46
1.27
0.25